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Items where Author is "Bennett, N"

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Number of items: 15.

Article

Alzanki, T, Bennett, N, Gwilliam, R, Jeynes, C, Bailey, P, Noakes, T and Sealy, B (2014) Ion Beam Analysis for Hall Scattering Factor Measurements in Antimony Implanted Bulk and Strained Silicon JOURNAL OF ENGINEERING RESEARCH, 2 (1). pp. 121-132.

Alzanki, T, Bennett, N, Gwilliam, R, Jeynes, C, Sealy, B, Bailey, P and Noakes, T (2014) Ion beam analysis for hall scattering factor measurements in antimony implanted bulk and strained silicon Journal of Engineering Research, 2 (1). pp. 122-132.

Bennett, NS, Radamson, HH, Beer, CS, Smith, AJ, Gwilliam, RM, Cowern, NEB and Sealy, BJ (2008) Enhanced n-type dopant solubility in tensile-strained Si THIN SOLID FILMS, 517 (1). pp. 331-333.

O'Reilly, L, Horan, K, McNally, PJ, Bennett, NS, Cowern, NEB, Lankinen, A, Sealy, BJ, Gwilliam, RM, Noakes, TCQ and Bailey, P (2008) Constraints on micro-Raman strain metrology for highly doped strained Si materials APPLIED PHYSICS LETTERS, 92 (23), ARTN 2.

Bennett, NS, Smith, AJ, Gwilliam, RM, Webb, RP, Sealy, BJ, Cowern, NEB, O'Reilly, L and McNally, PJ (2008) Antimony for n-type metal oxide semiconductor ultrashallow junctions in strained Si: A superior dopant to arsenic? JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 26 (1). pp. 391-395.

Bennett, NS, Cowern, NEB, Smith, AJ, Kah, M, Gwilliam, RM, Sealy, BJ, Noakes, TCQ, Bailey, P, Giubertoni, D and Bersani, M (2008) Differential Hall characterisation of ultrashallow doping in advanced Si-based materials Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 154-15 (1-3). pp. 229-233.

Cowern, NEB, Smith, AJ, Bennett, N, Sealy, BJ, Gwilliam, R, Webb, RP, Colombeau, B, Paul, S, Lerch, W and Pakfar, A (2008) Vacancy engineering - An ultra-low thermal budget method for high-concentration 'diffusionless' implantation doping Materials Science Forum, 573-57. pp. 295-304.

Hamilton, JJ, Collart, EJH, Bersani, M, Giubertoni, D, Gennaro, S, Bennett, NS, Cowern, NEB and Kirkby, KJ (2006) Optimal preamorphization conditions for the formation of highly activated ultra shallow junctions in silicon-on-insulator AIP Conference Proceedings, 866. pp. 73-75.

Bennett, NS, Cowern, NEB, Smith, AJ, Gwilliam, RM, Sealy, BJ, O'Reilly, L, McNally, PJ, Cooke, G and Kheyrandish, H (2006) Highly conductive Sb-doped layers in strained Si APPLIED PHYSICS LETTERS, 89 (18), ARTN 1.

Bennett, NS, Smith, AJ, Beer, CS, O'Reilly, L, Colombeau, B, Dilliway, GD, Harper, R, McNally, PJ, Gwilliam, R, Cowern, NEB and Sealy, BJ (2006) Enhanced antimony activation for ultra-shallow junctions in strained silicon Doping Engineering for Device Fabrication, 912. pp. 59-64.

Sealy, BJ, Smith, AJ, Alzanki, T, Bennett, N, Li, L, Jeynes, C, Colombeau, B, Collart, EJH, Emerson, NG, Gwilliam, RM and Cowern, NEB (2006) Shallow junctions in silicon via low thermal budget processing Extended Abstracts of the Sixth International Workshop on Junction Technology, IWJT '06. pp. 10-15.

Bennett, NS, O'Reilly, L, Smith, AJ, Gwilliam, RM, McNally, PJ, Cowern, NEB and Sealy, BJ (2006) Strain-enhanced activation of Sb ultrashallow junctions Ion Implantation Technology, 866. pp. 54-57.

Conference or Workshop Item

Bennett, NS, Cowern, NEB, Kheyrandish, H, Paul, S, Lerch, W, Smith, AJ, Gwilliam, R and Sealy, BJ (2008) Vacancy engineering for highly activated 'diffusionless' boron doping in bulk silicon In: ESSDERC 2008, 2008-09-15 - 2008-09-19, Edinburgh, UK.

Hamilton, JJ, Collart, EJH, Bersani, M, Giubertoni, D, Gennaro, S, Bennett, NS, Cowern, NEB and Kirkby, KJ (2006) Optimal preamorphization conditions for the formation of highly activated ultra shallow junctions in Silicon-on-insulator In: 16th International Conference on Ion Implantation Technology, 2006-06-11 - 2006-06-16, Marseille, FRANCE.

Thesis

Bennett, Nick. (2008) Ultrashallow junctions for strain-engineered NMOS devices. Doctoral thesis, University of Surrey (United Kingdom)..

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