Items where Author is "Batool, Z"

Article

Marko, IP, Jin, SR, Hild, K, Batool, Z, Bushell, ZL, Ludewig, P, Stolz, W, Volz, K, Butkute, R, Pacebutas, V, Geizutis, A, Krotkus, A and Sweeney, SJ (2015) Properties of hybrid MOVPE/MBE grown GaAsBi/GaAs based near-infrared emitting quantum well lasers SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 30 (9), ARTN 0.

Marko, IP, Bushell, ZL, Jin, SR, Hild, K, Batool, Z, Sweeney, SJ, Ludewig, P, Reinhard, S, Nattermann, L, Stolz, W and Volz, K (2014) Physical properties and optimization of GaBiAs/(Al)GaAs based near-infrared laser diodes grown by MOVPE with up to 4.4% Bi Journal of Physics D: Applied Physics, 47 (34).

Bushell, ZL, Ludewig, P, Knaub, N, Batool, Z, Hild, K, Stolz, W, Sweeney, SJ and Volz, K (2014) Growth and characterisation of Ga(NAsSi) alloy by metal-organic vapour phase epitaxy JOURNAL OF CRYSTAL GROWTH, 396. pp. 79-84.

Sweeney, SJ, Marko, IP, Jin, SR, Hild, K, Batool, Z, Ludewig, P, Natterman, L, Bushell, Z, Stolz, W, Volz, K, Broderick, CA, Usman, M, Harnedy, PE, Oreilly, EP, Butkute, R, Pacebutas, V, Geiutis, A and Krotkus, A (2014) Electrically injected GaAsBi quantum well lasers Conference Digest - IEEE International Semiconductor Laser Conference. pp. 80-81.

Batool, Z, Chatterjee, S, Chernikov, A, Duzik, A, Fritz, R, Gogineni, C, Hild, K, Hosea, TJC, Imhof, S, Johnson, SR, Jiang, Z, Jin, S, Koch, M, Koch, SW, Kolata, K, Lewis, RB, Lu, X, Masnadi-Shirazi, M, Millunchick, JM, Mooney, PM, Riordan, NA, Rubel, O, Sweeney, SJ, Thomas, JC, Thränhardt, A, Tiedje, T and Volz, K (2013) Bismuth-containing III-V semiconductors: Epitaxial growth and physical properties pp. 139-158.

Usman, M, Broderick, CA, Batool, Z, Hild, K, Hosea, TJC, Sweeney, SJ and O'Reilly, EP (2013) Impact of alloy disorder on the band structure of compressively strained GaBixAs1-x PHYSICAL REVIEW B, 87 (11), ARTN 1.

Marko, IP, Batool, Z, Hild, K, Jin, SR, Hossain, N, Hosea, TJC, Sweeney, SJ, Hosea, TJC, Petropoulos, JP, Zhong, Y, Dongmo, PB and Zide, JMO (2012) Temperature and Bi-concentration dependence of the bandgap and spin-orbit splitting in InGaBiAs/InP semiconductors for mid-infrared applications Applied Physics Letters, 101 (22).

Batool, Z, Hild, K, Hosea, TJC, Lu, X, Tiedje, T and Sweeney, SJ (2012) The electronic band structure of GaBiAs/GaAs layers: Influence of strain and band anti-crossing JOURNAL OF APPLIED PHYSICS, 111 (11), ARTN 1.

Conference or Workshop Item

Sweeney, SJ, Marko, IP, Jin, SR, Hild, K, Batool, Z, Ludewig, P, Natterman, L, Bushell, Z, Stolz, W, Volz, K, Broderick, CA, Usman, M, Harnedy, PE, O'Reilly, EP, Butkute, R, Pacebutas, V, Geizutis, A and Krotkus, A (2014) Electrically injected GaAsBi Quantum Well Lasers In: 24th IEEE International Semiconductor Laser Conference (ISLC), 2014-09-07 - 2014-09-10, Palma de Mallorca, SPAIN.

Hild, K, Batool, Z, Jin, SR, Hossain, N, Marko, IP, Hosea, TJC, Lu, X, Tiedje, T and Sweeney, SJ (2013) Auger Recombination Suppression And Band Alignment In GaAsBi/GaAs Heterostructures In: 31st International Conference on the Physics of Semiconductors (ICPS), 2012-07-29 - 2012-08-03, Zurich, SWITZERLAND.

Hosea, TJC, Chai, GMT, Marko, IP, Batool, Z, Hild, K, Jin, SR, Hossain, N, Sweeney, SJ, Petropoulos, JP, Zhong, Y, Dongmo, PB and Zide, JMO (2012) InGaBiAs/InP semiconductors for mid-infrared applications: Dependence of bandgap and spin-orbit splitting on temperature and bismuth content

Sweeney, SJ, Batool, Z, Hild, K, Jin, SR and Hosea, TJC (2011) The Potential Role of Bismide Alloys in Future Photonic Devices In: 13th ICTON, 2011-06-26 - 2011-06-30, Stockholm, Sweden.