University of Surrey

Test tubes in the lab Research in the ATI Dance Research

Items where Author is "Ashburn, Peter"

Up a level
Export as [feed] Atom [feed] RSS 1.0 [feed] RSS 2.0
Group by: Item Type | No Grouping
Jump to: Article
Number of items: 3.

Article

Bain, M., El Mubarek, A. W., Bonar, J. M., Wang, Y., Buiu, O., Gamble, H., Armstrong, B. M., Hemment, P. L. F., Hall, Steven and Ashburn, Peter (2005) SiGe HBTs on bonded SOI incorporating buried silicide layers IEEE Transactions on Electron Devices. pp. 317-324.

Kunz, V. Dominik, Uchino, Takashi, De Groot, C. H. (Kees), Ashburn, Peter, Donaghy, David C., Hall, Steven, Wang, Yun and Hemment, P. L. F. (2003) Reduction of parasitic capacitance in vertical MOSFETs by spacer local oxidation IEEE Transactions on Electron Devices. pp. 1487-1493.

Schiz, J. F. W., Lamb, Andrew C., Cristiano, Fuccio, Bonar, J. M., Ashburn, Peter, Hall, Stephen and Hemment, P. L. F. (2001) Leakage current mechanisms in SiGe HBTs fabricated using selective and nonselective epitaxy IEEE Transactions on Electron Devices. pp. 2492-2499.

This list was generated on Sun Oct 26 00:40:07 2014 IST.

Information about this web site

© The University of Surrey, Guildford, Surrey, GU2 7XH, United Kingdom.
+44 (0)1483 300800