Items where Author is "Ashburn, Peter"
 | Up a level |
Group by: Item Type | No Grouping
Jump to: Article
Number of items: 3.
Article
Bain, M., El Mubarek, A. W., Bonar, J. M., Wang, Y., Buiu, O., Gamble, H., Armstrong, B. M., Hemment, P. L. F., Hall, Steven and Ashburn, Peter (2005) SiGe HBTs on bonded SOI incorporating buried silicide layers IEEE Transactions on Electron Devices . pp. 317-324.
Kunz, V. Dominik, Uchino, Takashi, De Groot, C. H. (Kees), Ashburn, Peter, Donaghy, David C., Hall, Steven, Wang, Yun and Hemment, P. L. F. (2003) Reduction of parasitic capacitance in vertical MOSFETs by spacer local oxidation IEEE Transactions on Electron Devices . pp. 1487-1493.
Schiz, J. F. W., Lamb, Andrew C., Cristiano, Fuccio, Bonar, J. M., Ashburn, Peter, Hall, Stephen and Hemment, P. L. F. (2001) Leakage current mechanisms in SiGe HBTs fabricated using selective and nonselective epitaxy IEEE Transactions on Electron Devices . pp. 2492-2499.