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Items where Author is "Ashburn, P"

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Article

El Mubarek, H. A. W., Karunaratne, M., Bonar, J. M., Dilliway, G. D., Wang, Y., Hemment, P. L. F., Willoughby, A. F. and Ashburn, P. (2005) Effect of fluorine implantation dose on boron transient enhanced diffusion and boron thermal diffusion in Si<sub>1-<i>x</i></sub>Ge<sub><i>x</sub></i> x, 52 (4). pp. 518-526.

Bain, M., El Mubarek, A. W., Bonar, J. M., Wang, Y., Buiu, O., Gamble, H., Armstrong, B. M., Hemment, P. L. F., Hall, Steven and Ashburn, Peter (2005) SiGe HBTs on bonded SOI incorporating buried silicide layers IEEE Transactions on Electron Devices. pp. 317-324.

El Mubarek, H A, Karunaratne, M, Bonar, J M, Dilliway, G D, Wang, Y, Hemment, P L, Willoughby, A F and Ashburn, P (2005) Effect of Fluorine Implantation Dose on Boron Transient Enhanced Diffusion and Boron Thermal Diffusion in S1-xGex IEEE Transactions on Electron Devices, 52 (4).

Bain, M, El Mubarek, H A, Bonar, J M, Wang, Y, Buiu, O, Gamble, H, Armstrong, B M, Hemment, P L, Hall, S and Ashburn, P (2005) SiGeHBTs on Bonded SOI Incorporating Buried Silicide Layers IEEE Transactions on Electron Devices, 52 (3).

Dilliway, GDM, Cowern, NEB, Xu, L, McNally, PJ, Jeynes, C, Mendoza, E, Ashburn, P and Bagnall, DM (2004) Influence of H2 preconditioning on the nucleation and growth of self-assembled germanium islands on silicon (001) Materials Research Society Symposium Proceedings, 820. pp. 351-356.

El Mubarek, H A, Bonar, J M, Dilliway, G D, Ashburn, P, Karunaratne, M, Willoughby, A F, Wang, Y, Hemment, P L, Price, R, Zhang, J and Ward, P (2004) Effect of Fluorine Implantation Dose on Boron Thermal Diffusion in Silicon Journal of Applied Physics, 96 (8).

Waite, A. M., Lloyd, N. S., Ashburn, P., Evans, A. G. R., Ernst, T., Achard, H., Deleonibus, S., Wang, Y. and Hemment, Peter L. F. (2003) Raised source/drain (RSD) for 50nm MOSFETs - effect of epitaxy layer thickness on short channel effects 33rd Conference on European Solid-State Device Research, 2003. pp. 223-226.

Kunz, V. Dominik, Uchino, Takashi, De Groot, C. H. (Kees), Ashburn, Peter, Donaghy, David C., Hall, Steven, Wang, Yun and Hemment, P. L. F. (2003) Reduction of parasitic capacitance in vertical MOSFETs by spacer local oxidation IEEE Transactions on Electron Devices. pp. 1487-1493.

Schiz, J. F. W., Lamb, Andrew C., Cristiano, Fuccio, Bonar, J. M., Ashburn, Peter, Hall, Stephen and Hemment, P. L. F. (2001) Leakage current mechanisms in SiGe HBTs fabricated using selective and nonselective epitaxy IEEE Transactions on Electron Devices. pp. 2492-2499.

Graouil, H., Nejim, A., Hemment, Peter L. F., Riley, L., Hall, S., Mitchell, M. and Ashburn, P. (2000) SiGe device architectures synthesised by local area Ge+ implantation-structural and electrical characterisation Conference on Ion Implantation Technology, 2000. pp. 38-41.

Mitchell, M., Nigrin, S., Cristiano, F., Ashburn, P. and Hemment, Peter L. F. (1999) Characterisation of NPN and PNP SiGe heterojunction bipolar transistors formed by Ge+ implantation 1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. pp. 254-259.

Conference or Workshop Item

Xu, L, McNally, PJ, Dilliway, GDM, Cowern, NEB, Jeynes, C, Mendoza, E, Ashburn, P and Bagnall, DM (2005) Raman study of the strain and H-2 preconditioning effect on self-assembled Ge island on Si (001) In: 5th International Conference on Materials for Microelectronics and Nanoengineering, 2004-09-13 - 2004-09-14, Univ Southampton, Southampton, ENGLAND.

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