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Items where Author is "Andreev, A"

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Article

Crowley, MT, Marko, IP, Masse, NF, Andreev, AD, Tomic, S, Sweeney, SJ, O'Reilly, EP and Adams, AR (2009) The Importance of Recombination via Excited States in InAs/GaAs 1.3 mu m Quantum-Dot Lasers IEEE J SEL TOP QUANT, 15 (3). pp. 799-807.

Jang, Y D, Badcock, T J, Mowbray, D J, Skolnick, M S, Park, J, Lee, D, Liu, H Y, Hopkinson, M, Hogg, R A and Andreev, A D (2008) Enhanced Nonradiative Auger Recombination in P-Type Modulation Doped InAs/GaAs Quantum Dots Applied Physics Letters, 93 (10).

Yin, M, Nash, G R, Coomber, S D, Buckle, L, Carrington, P J, Krier, A, Andreev, A, Przeslak, S J, de Valicourt, G, Smith, S J, Emeny, M T and Ashley, T (2008) GaInSb/AlInSb Multi-Quantum-Wells for Mid-Infrared Lasers Applied Physics Letters, 93 (12).

Xu, X L, Andreev, A and Willliams, D A (2008) Manipulating Quantum-Confined Stark Shift in Electroluminescence from Quantum Dots with Side Gates New Journal of Physics, 10 (5).

Lindsay, A, O'Reilly, E P, Andreev, A D and Ashley, T (2008) Theory of Conduction Band Structure of InNxSb1-x and GaNxSb1-x Dilute Nitride Alloys Physical Review B, 77 (16).

Nash, G R, Smith, S J, Coomber, S D, Przeslak, S, Andreev, A, Carrington, P, Yin, M, Krier, A, Buckle, L, Emeny, M T and Ashley, T (2007) Midinfrared GaInSb/AlGaInSb Quantum Well Laser Diodes Grown on GaAs Applied Physics Letters, 91 (13).

Williams, D P, Andreev, A D and O'Reilly, E P (2006) Dependence of Exciton Energy on Dot Size in GaN/AlN Quantum Dots Physical Review B, 73 (24).

Nash, G R, Haigh, M K, Hardaway, H R, Buckle, L, Andreev, A D, Gordon, N T, Smith, S J, Emeny, M T and Ashley, T (2006) InSb/AlInSb Quantum-Well Light-Emitting Diodes Applied Physics Letters, 88 (5).

Kundys, D O, Wells, J P, Andreev, A D, Hashemizadeh, S A, Wang, T, Parbrook, P J, Fox, A M, Mowbray, D J and Skolnick, M S (2006) Resolution of Discrete Excited States in InxGa1-xN Multiple Quantum Wells Using Degenerate Four-Wave Mixing Physical Review B, 73 (16).

Williams, DP, Andreev, AD, O'Reilly, EP and Faux, DA (2005) Derivation of built-in polarization potentials in nitride-based semiconductor quantum dots PHYSICAL REVIEW B, 72 (23), ARTN 2.

Marko, IP, Masse, NF, Sweeney, SJ, Andreev, AD, Adams, AR, Hatori, N and Sugawara, M (2005) Carrier transport and recombination in p-doped and intrinsic 1.3 mu m InAs/GaAs quantum-dot lasers APPLIED PHYSICS LETTERS, 87 (21), ARTN 2.

Christmas, UME, Andreev, AD and Faux, DA (2005) Calculation of electric field and optical transitions in InGaN/GaN quantum wells JOURNAL OF APPLIED PHYSICS, 98 (7), ARTN 0.

Andreev, A D and O'Reilly, E P (2005) Optical Matrix Element in InAs/GaAs Quantum Dots: Dependence on Quantum Dot Parameters Applied Physics Letters, 87 (21).

Sarigiannidou, E, Monroy, E, Daudin, B, Rouviere, J L and Andreev, A D (2005) Strain Distribution in GaN/AlN Quantum-Dot Superlattices Applied Physics Letters, 87 (20).

Tartakovskii, A, Makhonin, M N, Sellers, I R, Cahill, J, Andreev, A D, Whittaker, D M, Wells, J P, Fox, A M, Mowbray, D J, Skolnick, M S, Groom, K M, Steer, M J, Liu, H Y and Hopkinson, M (2004) Effect of Thermal Annealing and Strain Engineering on the Fine Structure of Quantum Dot Excitons Physical Review B, 70 (19).

Andreev, A D and O'Reilly, E P (2004) Theoretical Study of Auger Recombination in a GaInNAs 1.3 mu m Quantum Well Laser Structure Applied Physics Letters, 84 (11).

Tomic, S, O'Reilly, EP, Fehse, R, Sweeney, Stephen, Adams, Alfred, Andreev, Aleksey, Choulis, SA, Hosea, Thomas and Riechert, H (2003) Theoretical and experimental analysis of 1.3-mu m InGaAsN/GaAs lasers IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 9 (5). pp. 1228-1238.

Marko, I P, Andreev, A D, Adams, A R, Krebs, R, Reithmaier, J P and Forchel, A (2003) The Role of Auger Recombination in InAs 1.3-/mu m Quantum-Dot Lasers Investigated Using High Hydrostatic Pressure IEEE Journal of Selected Topics in Quantum Electronics, 9 (5).

Choulis, S. A., Andreev, A., Merrick, M., Adams, A. R., Murdin, B. N., Krier, A. and Sherstnev, V. V. (2003) High-pressure measurements of mid-infrared electroluminescence from InAs light-emitting diodes at 3.3 µm Applied Physics Letters, 1149 (2003).

Marko, IP, Andreev, AD, Adams, AR, Krebs, R, Reithmaier, JP and Forchel, A (2003) Importance of Auger recombination in InAs 1.3 mu m quantum dot lasers ELECTRONICS LETTERS, 39 (1). pp. 58-59.

Choulis, S A, Andreev, A, Merrick, M, Adams, A R, Murdin, B N, Krier, A and Sherstnev, V V (2003) High-Pressure Measurements of Mid-Infrared Electroluminescence from InAs Light-Emitting Diodes at 3.3&#956m Applied Physics Letters, 82 (8). pp. 1149-1151.

Marko, I P, Andreev, A D, Adams, A R, Krebs, R, Reithmaier, J P and Forchel, A (2003) The Importance of Auger Recombination in InAs 1.3 um Quantum Dot Lasers Electronics Letters, 58 (59).

Marko, IP, Andreev, AD, Adams, AR, Krebs, R, Reithmaier, JP and Forchel, A (2003) Auger recombination in 1.3-μm InAs/GaInAs quantum dot lasers studied using high pressure Conference on Lasers and Electro-Optics Europe - Technical Digest. p. 175.

O'Reilly, EP, Fahy, S, Lindsay, A, Tomić, S, Fehse, R, Adams, AR, Sweeney, SJ, Andreev, AD, Klar, PJ, Grüning, H and Riechert, H (2003) Novel electronic and optoelectronic properties of GaInNAs and related alloys OSA Trends in Optics and Photonics Series, 88. pp. 523-525.

Fehse, R, Tomic, S, Adams, AR, Sweeney, SJ, O'Reilly, EP, Andreev, A and Riechert, H (2002) A quantitative study of radiative, Auger, and defect related recombination processes in 1.3-mu m GaInNAs-based quantum-well lasers IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 8 (4). pp. 801-810.

Tomić, S, Fehse, R, Choulis, SA, O'Reilly, EP, Adams, AR, Sweeney, SJ, Andreev, AD, Hosea, TJC and Riechert, H (2002) Experimental and theoretical analysis of the recombination processes in GaInNAs 1.3 μm Lasers Conference Digest - IEEE International Semiconductor Laser Conference. pp. 41-42.

Sweeney, SJ, Higashi, T, Andreev, A, Adams, AR, Uchida, T and Fujii, T (2001) Superior temperature performance of 1.3 mu m AlGaInAs-Based semiconductor lasers investigated at high pressure and low temperature PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 223 (2). pp. 573-579.

Andreev, AD, Downes, JR, Faux, DA and O'Reilly, EP (1999) Strain distributions in quantum dots of arbitrary shape JOURNAL OF APPLIED PHYSICS, 86 (1). pp. 297-305.

Conference or Workshop Item

Crowley, MT, Marko, IP, Masse, NF, Andreev, AD, Sweeney, SJ, O'Reilly, EP and Adams, AR (2008) The importance of recombination via excited states in InAs/GaAs 1.3μm quantum dot lasers In: 21st ISLC 2008, 2008-09-14 - 2008-09-18, Sorento, Italy.

Massé, NF, Sweeney, SJ, Marko, IP, Andreev, AD, Adams, AR, Hatori, N and Sugawara, M (2006) Intrinsic limitations of p-doped and undoped 1.3 μm InAs/GaAs quantum dot lasers In: ISLC 2006, 2006-09-17 - 2006-09-21, Hawaii, USA.

Marko, IP, Andreev, AD, Sweeney, SJ, Adams, AR, Krebs, R, Deubert, S, Reithmaier, JP, Forchel, A, Menendez, J and VanDeWalle, CG (2005) The influence of auger processes on recombination in long-wavelength InAs/GaAs quantum dots In: 27th International Conference on the Physics of Semiconductors (ICPS-27), 2004-07-26 - 2004-07-30, Flagstaff, AZ.

Williams, DP, Andreev, AD, Faux, DA and O'Reilly, EP (2004) Surface integral determination of built-in electric fields and analysis of exciton binding energies in nitride-based quantum dots In: 11th International Conference on Modulated Semiconductor Structures (MSS11), 2003-07-14 - 2003-07-18, Nara, JAPAN.

Marko, IP, Andreev, AD, Adams, AR, Krebs, R, Reithmaier, JP and Forchel, A (2003) High-pressure studies of the recombination processes, threshold currents, and lasing wavelengths in InAs/GaInAs quantum dot lasers In: 10th International Conference on High Pressures in Semiconductor Physics (HPSP-X), 2002-08-05 - 2002-08-08, UNIV SURREY, GUILDFORD, ENGLAND.

Adams, AR, Fehse, R, Tomic, S, O'Reilly, EP, Andreev, A, Knowles, G, Sale, TE, Sweeney, SJ, Steinle, G, Ramakrishnan, A and Riechert, H (2002) Characterisation of 1.3pm wavelength GaInNAs/GaAs edge-emitting and vertical-cavity surface-emitting lasers using low-temperature and high-pressure In: Conference on Asia-Pacific Optical and Wireless Communication (APOC 2002), 2002-10-15 - 2002-10-18, SHANGHAI, PEOPLES R CHINA.

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