Items where Author is "Allam, J"

Article

Tan, SL, Hunter, CJ, Zhang, S, Tan, LJJ, Goh, YL, Ng, JS, David, JPR, Marko, IP, Sweeney, SJ, Adams, AR and Allam, J (2012) Improved optoelectronic properties of rapid thermally annealed dilute nitride GaInNAs photodetectors Journal of Electronic Materials, 41 (12). 3393 - 3401. ISSN 0361-5235

Litvinenko, KL, Nikzad, L, Pidgeon, CR, Allam, J, Cohen, LF, Ashley, T, Emeny, M, Zawadzki, W and Murdin, BN (2008) Temperature dependence of the electron Lande g factor in InSb and GaAs PHYSICAL REVIEW B, 77 (3). ? - ?. ISSN 1098-0121

Litvinenko, K L, Nikzad, L, Allam, J, Murdin, B N, Pidgeon, C R, Harris, J J, Zhang, T and Cohen, L F (2007) Spin Lifetime in High Quality InSb Epitaxial Layers Grown on GaAs Journal of Applied Physics, 101 (8). ISSN 00218979

Litvinenko, K L, Murdin, B N, Allam, J, Pidgeon, C R, Zhang, T, Harris, J J, Cohen, L F, Eustace, D A and McComb, D W (2006) Spin Lifetime in InAs Epitaxial Layers Grown on GaAs Physical Review B, 74 (7). ISSN 1098-0121

Litvinenko, K L, Murdin, B N, Allam, J, Pidgeon, C R, Bird, M, Morris, K, Branford, W, Clowes, S K, Cohen, L F, Ashley, T and Buckle, L (2006) Spin Relaxation in N-InSb/AlInSb Quantum Wells New Journal of Physics, 8 (4). ISSN 1367-2630

Roither, J, Pichler, S, Kovalenko, M V, Heiss, W, Feychuk, P, Panchuck, O, Allam, J and Murdin, B N (2006) Two- and One-Dimensional Light Propagations and Gain in Layer-by-Layer-Deposited Colloidal Nanocrystal Waveguides Applied Physics Letters, 89 (11). ISSN 00036951

Murzyn, P, Pidgeon, C R, Phillips, P J, Merrick, M, Litvinenko, K L, Allam, J, Murdin, B N, Ashley, T, Jefferson, J H, Miller, A and Cohen, L F (2005) Erratum: Suppression of D'yakonov-Perel Spin Relaxation in InAs and InSb by n-Type Doping at 300 K (vol 83, pg 5220, 2003) Applied Physics Letters, 87 (12). ISSN 00036951

Galbraith, I, Chari, R, Pellegrini, S, Phillips, P J, Dent, C J, van der Meer, A F, Clarke, D G, Kar, A K, Buller, G S, Pidgeon, C R, Murdin, B N, Allam, J and Strasser, G (2005) Excitonic Signatures in the Photoluminescence and Terahertz Absorption of a GaAs/AlxGa1-xAs Multiple Quantum Well Physical Review B, 71 (7). ISSN 1098-0121

Murdin, B N, Litvinenko, K, Allam, J, Pidgeon, C R, Bird, M, Morrison, K, Zhang, T, Clowes, S K, Branford, W R, Harris, J and Cohen, L F (2005) Temperature and Doping Dependence of Spin Relaxation in n-InAs Physical Review B, 72 (8). ISSN 1098-0121

Murzyn, P, Pidgeon, C R, Phillips, P J, Merrick, M, Litvinenko, K L, Allam, J, Murdin, B N, Ashley, T, Jefferson, J H, Miller, A and Cohen, L F (2003) Suppression of D'yakonov-Perel Spin Relaxation in InAs and InSb by n-Type Doping at 300 K Applied Physics Letters, 83 (25). ISSN 00036951

Conference or Workshop Item

Ng, JS, Tan, SL, Goh, YL, Tan, CH, David, JPR, Allam, J, Sweeney, SJ and Adams, AR (2010) InGaAsN as absorber in APDs for 1.3 micron wavelength applications In: IPRM 2010, 2010-05-31 - 2010-06-04, Kagawa, Japan.

Tan, SL, Tan, LJJ, Goh, YL, Zhang, S, Ng, JS, David, JPR, Marko, IP, Allam, J, Sweeney, SJ and Adams, AR (2010) Reduction of dark current and unintentional background doping in InGaAsN photodetectors by ex situ annealing In: Optical Sensing and Detection, 2010-04-12 - 2010-04-15, Brussels, Belgium.

Soong, WM, Ng, JS, Steer, MJ, Hopkinson, M, David, JPR, Chamings, J, Sweeney, SJ, Adams, AR and Allam, J (2008) Dark current mechanisms in bulk GaInNAs photodiodes In: IPRM 2008, 2008-05-25 - 2008-05-29, Versailles, France.

O'Rourke, C, Allam, J, Boehringer, K, Klaedtke, A, Hamm, J and Hess, O (2005) Coherent interactions and long term evolution of ultrafast transients in a semiconductor laser In: 18th Annual Meeting of the IEEE-Lasers-and-Electro-Optical-Society, 2005-10-22 - 2005-10-28, Sydney, AUSTRALIA.