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Items where Author is "Adams, AR"

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Tan, SL, Soong, WM, Green, JE, Steer, MJ, Zhang, S, Tan, LJJ, Ng, JS, David, JPR, Marko, IP, Sweeney, SJ, Adams, AR and Allam, J (2013) Experimental evaluation of impact ionization in dilute nitride GaInNAs diodes Applied Physics Letters, 103 (10). ISSN 0003-6951

Tan, SL, Hunter, CJ, Zhang, S, Tan, LJJ, Goh, YL, Ng, JS, David, JPR, Marko, IP, Sweeney, SJ, Adams, AR and Allam, J (2012) Improved optoelectronic properties of rapid thermally annealed dilute nitride GaInNAs photodetectors Journal of Electronic Materials, 41 (12). 3393 - 3401. ISSN 0361-5235

Ikyo, BA, Marko, IP, Adams, AR, Sweeney, SJ, Canedy, CL, Vurgaftman, I, Kim, CS, Kim, M, Bewley, WW and Meyer, JR (2011) Temperature dependence of 4.1 mu m mid-infrared type II "W" interband cascade lasers APPLIED PHYSICS LETTERS, 99 (2). ? - ?. ISSN 0003-6951

Ng, JS, Tan, SL, Goh, YL, Tan, CH, David, JPR, Allam, J, Sweeney, SJ and Adams, AR (2010) InGaAsN as absorber in APDs for 1.3 micron wavelength applications In: IPRM 2010, 2010-05-31 - 2010-06-04, Kagawa, Japan.

Marko, IP, Aldukhayel, AM, Adams, AR, Sweeney, SJ, Teissier, R, Baranov, AN and Tomić, S (2010) Physical properties of short wavelength 2.6μm InAs/AlSb-based quantum cascade lasers Conference Digest - IEEE International Semiconductor Laser Conference. 95 - 96. ISSN 0899-9406

Tan, SL, Tan, LJJ, Goh, YL, Zhang, S, Ng, JS, David, JPR, Marko, IP, Allam, J, Sweeney, SJ and Adams, AR (2010) Reduction of dark current and unintentional background doping in InGaAsN photodetectors by ex situ annealing In: Optical Sensing and Detection, 2010-04-12 - 2010-04-15, Brussels, Belgium.

Marko, IP, Ikyo, AB, Adams, AR, Sweeney, SJ, Bachmann, A, Kashani-Shirazi, K and Amann, M-C (2009) Band-structure and gain-cavity tuning of 2.4-μm GaSb buried tunnel junction VCSELs Proceedings of European Conference on Lasers and Electro-Optics 2009 and the European Quantum Electronics Conference.

Adams, AR, Marko, IP, Sweeney, SJ, Teissier, R, Baranov, AN and Tomić, S (2009) The effect of hydrostatic pressure on the operation of quantum cascade lasers In: Quantum Sensing and Nanophotonic Devices VI, 2009-01-25 - 2009-01-28, San Jose, USA.

Chamings, J, Adams, AR, Sweeney, SJ, Kunert, B, Volz, K and Stolz, W (2008) Temperature dependence and physical properties of Ga(NAsP)/GaP semiconductor lasers APPLIED PHYSICS LETTERS, 93 (10). ? - ?. ISSN 0003-6951

Chamings, J, Adams, AR, Sweeney, SJ, Kunert, B, Volz, K and Stolz, W (2008) Temperature dependence and physical properties of Ga(NAsP)/GaP semiconductor lasers APPLIED PHYSICS LETTERS, 93 (10). ? - ?. ISSN 0003-6951

Soong, WM, Ng, JS, Steer, MJ, Hopkinson, M, David, JPR, Chamings, J, Sweeney, SJ, Adams, AR and Allam, J (2008) Dark current mechanisms in bulk GaInNAs photodiodes In: IPRM 2008, 2008-05-25 - 2008-05-29, Versailles, France.

Masse, NF, Homeyer, E, Marko, IP, Adams, AR, Sweeney, SJ, Dehaese, O, Piron, R, Grillot, F and Loualiche, S (2007) Temperature and pressure dependence of the recombination processes in 1.5 mu m InAs/InP (311)B quantum dot lasers APPL PHYS LETT, 91 (13). ? - ?. ISSN 0003-6951

Masse, NF, Homeyer, E, Marko, IP, Adams, AR, Sweeney, SJ, Dehaese, O, Piron, R, Grillot, F and Loualiche, S (2007) Temperature and pressure dependence of the recombination processes in 1.5 mu m InAs/InP (311)B quantum dot lasers APPLIED PHYSICS LETTERS, 91 (13). ? - ?. ISSN 0003-6951

Masse, NF, Adams, AR and Sweeney, SJ (2007) Experimental determination of the band gap dependence of Auger recombination in InGaAs/InP multiple quantum well lasers at room temperature APPLIED PHYSICS LETTERS, 90 (16). ? - ?. ISSN 0003-6951

Masse, NF, Adams, AR and Sweeney, SJ (2007) Experimental determination of the band gap dependence of Auger recombination in InGaAs/InP multiple quantum well lasers at room temperature APPLIED PHYSICS LETTERS, 90 (16). ? - ?. ISSN 0003-6951

Ng, JS, Soong, WM, Steer, MJ, Hopkinson, M, David, JPR, Chamings, J, Sweeney, SJ and Adams, AR (2007) Long wavelength bulk GaInNAs p-i-n photodiodes lattice matched to GaAs JOURNAL OF APPLIED PHYSICS, 101 (6). ? - ?. ISSN 0021-8979

Ng, JS, Soong, WM, Steer, MJ, Hopkinson, M, David, JPR, Chamings, J, Sweeney, SJ and Adams, AR (2007) Long wavelength bulk GaInNAs p-i-n photodiodes lattice matched to GaAs JOURNAL OF APPLIED PHYSICS, 101 (6). ? - ?. ISSN 0021-8979

Marko, IP, Masse, NF, Sweeney, SJ, Adams, AR, Hatori, N, Sugawara, M, Jantsch, W and Schaffler, F (2007) Recombination, transport and loss mechanisms in p-doped InAs/GaAs quantum dots In: 28th International Conference on the Physics of Semiconductors (ICPS-28), 2006-07-24 - 2006-07-28, Vienna, AUSTRIA.

Marko, IP, Adams, AR, Sweeney, SJ, Whitbread, ND, Ward, AJ, Asplin, B and Robbins, DJ (2007) The influence of carrier density non-pinning on the output power of 1.55 μm lasers at high temperature In: CLEOE-IQEC 2007, 2007-06-17 - 2007-06-23, Munich, Germany.

Jin, SR, Ahmad, CN, Sweeney, SJ, Adams, AR, Murdin, BN, Page, H, Marcadet, X, Sirtori, C and Tomic, S (2006) Spectroscopy of GaAs/AlGaAs quantum-cascade lasers using hydrostatic pressure APPLIED PHYSICS LETTERS, 89 (22). ? - ?. ISSN 0003-6951

Masse, NF, Sweeney, SJ, Marko, IP, Adams, AR, Hatori, N and Sugawara, M (2006) Temperature dependence of the gain in p-doped and intrinsic 1.3 mu m InAs/GaAs quantum dot lasers APPL PHYS LETT, 89 (19). ? - ?. ISSN 0003-6951

Masse, NF, Sweeney, SJ, Marko, IP, Adams, AR, Hatori, N and Sugawara, M (2006) Temperature dependence of the gain in p-doped and intrinsic 1.3 mu m InAs/GaAs quantum dot lasers APPLIED PHYSICS LETTERS, 89 (19). ? - ?. ISSN 0003-6951

O'Brien, K, Sweeney, SJ, Adams, AR, Murdin, BN, Salhi, A, Rouillard, Y and Joullie, A (2006) Recombination processes in midinfrared InGaAsSb diode lasers emitting at 2.37 mu m APPLIED PHYSICS LETTERS, 89 (5). ? - ?. ISSN 0003-6951

Adams, AR and Sweeney, SJ (2006) The physics controlling the sensitivity of semiconductor lasers to high temperatures In: Conference on Optical Fiber Communications/National Fiber Optic Engineers Conference, 2006-03-05 - 2006-03-10, Anaheim, CA.

O'Brien, K, Adams, AR, Sweeney, SJ, Jin, SR, Ahmad, CN, Murdin, BN, Canedy, CL, Vurgaftman, I and Meyer, JR (2006) Analysis of the major loss processes in mid-infrared type-II "W" diode lasers

Massé, NF, Sweeney, SJ, Marko, IP, Andreev, AD, Adams, AR, Hatori, N and Sugawara, M (2006) Intrinsic limitations of p-doped and undoped 1.3 μm InAs/GaAs quantum dot lasers In: ISLC 2006, 2006-09-17 - 2006-09-21, Hawaii, USA.

Marko, IP, Masse, NF, Sweeney, SJ, Andreev, AD, Adams, AR, Hatori, N and Sugawara, M (2005) Carrier transport and recombination in p-doped and intrinsic 1.3 mu m InAs/GaAs quantum-dot lasers APPLIED PHYSICS LETTERS, 87 (21). ? - ?. ISSN 0003-6951

Marko, IP, Adams, AR, Sweeney, SJ, Mowbray, DJ, Skolnick, MS, Liu, HYY and Groom, KM (2005) Recombination and loss mechanisms in low-threshold InAs-GaAs 1.3-mu m quantum-dot lasers In: 19th IEEE International Semiconductor Laser Conference, 2004-09-21 - 2004-09-25, Matsue, JAPAN.

Fehse, R, O'Reilly, EP, Sweeney, SJ, Adams, AR, McConville, D, Riechert, H and Geelhaar, L (2005) Investigation of carrier recombination processes and transport properties in GaInAsN/GaAs quantum wells AIP Conference Proceedings, 772. 985 - 986. ISSN 0094-243X

Sweeney, SJ, Lock, DA, Adams, AR, Menendez, J and VanDeWalle, CG (2005) Carrier recombination in InGaAs(P) quantum well laser structures: Band gap and temperature dependence In: 27th International Conference on the Physics of Semiconductors (ICPS-27), 2004-07-26 - 2004-07-30, Flagstaff, AZ.

Marko, IP, Andreev, AD, Sweeney, SJ, Adams, AR, Krebs, R, Deubert, S, Reithmaier, JP, Forchel, A, Menendez, J and VanDeWalle, CG (2005) The influence of auger processes on recombination in long-wavelength InAs/GaAs quantum dots In: 27th International Conference on the Physics of Semiconductors (ICPS-27), 2004-07-26 - 2004-07-30, Flagstaff, AZ.

Marko, IP, Masse, N, Sweeney, SJ, Adams, AR, Sellers, IR, Mowbray, DJ, Skolnick, MS, Liu, HY and Groom, KM (2005) Effect of gain saturation and nonradiative recombination on the thermal characteristics of InAs/GaAs 1.3 mu m quantum dot lasers

Masse, NF, Marko, IP, Sweeney, SJ, Adams, AR, Hatori, N and Sugarawa, M (2005) The influence of p-doping on the temperature sensitivity of 1.3 mu m quantum dot lasers

Jin, SR, Sweeney, SJ, Ahmad, CN, Adams, AR and Murdin, BN (2004) Radiative and Auger recombination in 1.3 mu m InGaAsP and 1.5 mu m InGaAs quantum-well lasers measured under high pressure at low and room temperatures APPLIED PHYSICS LETTERS, 85 (3). 357 - 359. ISSN 0003-6951

Fehse, R, Sweeney, SJ, Adams, AR, McConville, D, Riechert, H and Geelhaar, L (2004) Influence of growth temperature on defect density in 1.3 mu m GaInNAs-based lasers In: 19th IEEE International Semiconductor Laser Conference, 2004-09-21 - 2004-09-25, Matsue, JAPAN.

Marko, IP, Adams, AR, Sweeney, SJ, Sellers, IR, Mowbray, DJ, Skolnick, MS, Liu, HY and Groom, KM (2004) Recombination and loss mechanisms in low-threshold InAs/GaAs 1.3 mu m quantum dot lasers In: 19th IEEE International Semiconductor Laser Conference, 2004-09-21 - 2004-09-25, Matsue, JAPAN.

Sweeney, SJ, McConville, D, Jin, SR, Ahmad, CN, Masse, NF, Bouyssou, RX, Adams, AR and Hanke, C (2004) Temperature and wavelength dependence of recombination processes in 1.5 mu m InGaAlAs/InP-based lasers In: 16th International Conference on Indium Phosphide and Related Materials, 2004-05-31 - 2004-06-04, Kagoshima, JAPAN.

Sweeney, SJ, Lyons, LJ, Adams, AR and Lock, DA (2003) Direct measurement of facet temperature up to melting point and COD in high-power 980-nm semiconductor diode lasers IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 9 (5). 1325 - 1332. ISSN 1077-260X

Jin, SR, Sweeney, SJ, Tomic, S, Adams, AR and Riechert, H (2003) High-pressure studies of recombination mechanisms in 1.3-mu m GaInNAs quantum-well lasers IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 9 (5). 1196 - 1201. ISSN 1077-260X

Knowles, G, Fehse, R, Tomic, S, Sweeney, SJ, Sale, TE, Adams, AR, O'Reilly, P, Steinle, G and Riechert, H (2003) Investigation of 1.3-mu m GaInNAs vertical-cavity surface-emitting lasers (VCSELs) using temperature, high-pressure, and modelling techniques IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 9 (5). 1202 - 1208. ISSN 1077-260X

Tomic, S, O'Reilly, EP, Fehse, R, Sweeney, SJ, Adams, AR, Andreev, AD, Choulis, SA, Hosea, TJC and Riechert, H (2003) Theoretical and experimental analysis of 1.3-mu m InGaAsN/GaAs lasers IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 9 (5). 1228 - 1238. ISSN 1077-260X

Jin, SR, Sweeney, SJ, Tomic, S, Adams, AR and Riechert, H (2003) Unusual increase of the Auger recombination current in 1.3 mu m GaInNAs quantum-well lasers under high pressure APPLIED PHYSICS LETTERS, 82 (14). 2335 - 2337. ISSN 0003-6951

Sweeney, SJ, Fehse, R, Adams, AR and Riechert, H (2003) Intrinsic temperature sensitivities of 1.3 mu m GaInNAs/GaAs, InGaAsP/InP and AlGaInAs/InP-based semiconductor lasers In: 16th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2003-10-27 - 2003-10-30, TUCSON, AZ.

Lock, D, Sweeney, SJ and Adams, AR (2003) Wavelength dependence of catastrophic optical damage threshold in 980nm semiconductor diode lasers In: 16th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2003-10-27 - 2003-10-30, TUCSON, AZ.

O'Reilly, EP, Fahy, S, Lindsay, A, Tomić, S, Fehse, R, Adams, AR, Sweeney, SJ, Andreev, AD, Klar, PJ, Grüning, H and Riechert, H (2003) Novel electronic and optoelectronic properties of GaInNAs and related alloys OSA Trends in Optics and Photonics Series, 88. 523 - 525. ISSN 1094-5695

This list was generated on Thu Apr 24 01:40:27 2014 IST.

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