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Article

Eales, Timothy, Marko, Igor, Ikyo, BA, Adams, Alfred, Arafin, S, Sprengel, S, Amann, M-C and Sweeney, Stephen (2017) Wavelength dependence of efficiency limiting mechanisms in Type-I Mid-infrared GaInAsSb/GaSb lasers IEEE Journal of Selected Topics in Quantum Electronics, 23 (6).

Adams, Alfred, Marko, Igor, Mukherjee, J, Stolojan, Vlad, Sweeney, Stephen, Gocalinska, A, Pelucchi, E, Thomas, K and Corbett, B (2015) Semiconductor Quantum Well Lasers With a Temperature-Insensitive Threshold Current IEEE Journal of Selected Topics in Quantum Electronics, 21 (6), 150080.

Marko, IP, Adams, AR, Massé, NF and Sweeney, SJ (2014) Effect of non-pinned carrier density above threshold in InAs quantum dot and quantum dash lasers IET Optoelectronics, 8 (2). pp. 88-93.

Tan, SL, Soong, WM, Green, JE, Steer, MJ, Zhang, S, Tan, LJJ, Ng, JS, Marko, IP, Sweeney, SJ, Adams, AR, Allam, J and David, JPR (2013) Experimental evaluation of impact ionization in dilute nitride GaInNAs diodes APPLIED PHYSICS LETTERS, 103 (10), ARTN 1.

Crutchley, BG, Marko, Igor, Adams, Alfred and Sweeney, Stephen (2013) Investigating the efficiency limitations of GaN-based emitters 2013 Conference on Lasers and Electro-Optics Europe and International Quantum Electronics Conference, CLEO/Europe-IQEC 2013.

Ikyo, BA, Marko, IP, Hild, K, Adams, AR, Sweeney, SJ, Arafin, S and Amann, M-C (2013) The effect of hole leakage and auger recombination on the temperature sensitivity of GaInAsSb/GaSb mid-infrared lasers Lasers and Electro-Optics Europe (CLEO EUROPE/IQEC), 2013 Conference on and International Quantum Electronics Conference.

Tan, S, Hunter, CJ, Zhang, S, Tan, LJJ, Goh, YL, Ng, JS, David, JPR, Marko, Igor, Sweeney, Stephen, Adams, Alfred and Allam, Jeremy (2012) Improved optoelectronic properties of rapid thermally annealed dilute nitride GaInNAs photodetectors Journal of Electronic Materials, 41 (12). pp. 3393-3401.

Link, CL, Stern, TA, Piccolo, RS, Marceau, LD, Arber, S, Adams, A, Siegrist, J, von dem Knesebeck, O and McKinlay, JB (2011) Diagnosis and Management of Depression in 3 Countries: Results From a Clinical Vignette Factorial Experiment. Primary Care Companion CNS Disord, 13 (5).

Ikyo, BA, Marko, IP, Adams, AR, Sweeney, SJ, Canedy, CL, Vurgaftman, I, Kim, CS, Kim, M, Bewley, WW and Meyer, JR (2011) Temperature dependence of 4.1 mu m mid-infrared type II "W" interband cascade lasers APPLIED PHYSICS LETTERS, 99 (2), ARTN 0.

Tan, SL, Zhang, S, Soong, WM, Goh, YL, Tan, LJJ, Ng, JS, David, JPR, Marko, IP, Adams, AR, Sweeney, SJ and Allam, J (2011) GaInNAsSb/GaAs Photodiodes for Long-Wavelength Applications IEEE ELECTRON DEVICE LETTERS, 32 (7). pp. 919-921.

Konrad, TR, Link, CL, Shackelton, RJ, Marceau, LD, von Dem Knesebeck, O, Siegrist, J, Arber, S, Adams, A and McKinlay, JB (2010) It's About Time Physicians' Perceptions of Time Constraints in Primary Care Medical Practice in Three National Healthcare Systems Medical Care, 48 (2). pp. 95-100.

Marko, IP, Aldukhayel, AM, Adams, AR, Sweeney, SJ, Teissier, R, Baranov, AN and Tomić, S (2010) Physical properties of short wavelength 2.6μm InAs/AlSb-based quantum cascade lasers Conference Digest - IEEE International Semiconductor Laser Conference. pp. 95-96.

Ikyo, BA, Marko, IP, Adams, AR, Sweeney, SJ, Canedy, CL, Vurgaftman, I, Kim, CS, Kim, M, Bewley, WW and Meyer, JR (2010) Temperature sensitivity of mid-infrared type II "W" interband cascade lasers (ICL) emitting at 4.1μm at room temperature 22nd IEEE International Semi-conductor Laser Conference. pp. 41-42.

Crowley, MT, Marko, IP, Masse, NF, Andreev, AD, Tomic, S, Sweeney, SJ, O'Reilly, EP and Adams, AR (2009) The Importance of Recombination via Excited States in InAs/GaAs 1.3 mu m Quantum-Dot Lasers IEEE J SEL TOP QUANT, 15 (3). pp. 799-807.

Masse, NF, Marko, IP, Adams, AR and Sweeney, SJ (2009) Temperature insensitive quantum dot lasers: are we really there yet? JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 20. pp. 272-276.

Marko, IP, Ikyo, AB, Adams, AR, Sweeney, SJ, Bachmann, A, Kashani-Shirazi, K and Amann, M-C (2009) Band-structure and gain-cavity tuning of 2.4-μm GaSb buried tunnel junction VCSELs Proceedings of European Conference on Lasers and Electro-Optics 2009 and the European Quantum Electronics Conference.

Lutfey, KE, Link, C, Marceau, C, Grant, RW, Adams, A, Arber, S, Siegrist, J, Bonte. M, , von dem Knesebeck, O and McKinlay, J (2009) Diagnostic Certainty as a Source of Medical Practice Variation in Coronary Heart Disease: Results from a Cross-National Experiment of Clinical Decision Making Medical Decision Making, 29 (5). pp. 606-618.

von dem Knesebeck, O, Boente, M, Siegrist, J, Marceau, L, Link, C, Arber, S, Adams, A and McKinlay, J (2008) Country differences in the diagnosis and management of coronary heart disease - a comparison between the US, the UK and Germany BMC HEALTH SERVICES RESEARCH, 8, ARTN 1.

Chamings, J, Adams, AR, Sweeney, SJ, Kunert, B, Volz, K and Stolz, W (2008) Temperature dependence and physical properties of Ga(NAsP)/GaP semiconductor lasers APPLIED PHYSICS LETTERS, 93 (10), ARTN 1.

Chamings, J, Adams, AR, Sweeney, SJ, Kunert, B, Volz, K and Stolz, W (2008) Temperature dependence and physical properties of Ga(NAsP)/GaP semiconductor lasers APPLIED PHYSICS LETTERS, 93 (10), ARTN 1.

Molloy, EL, Adams, A, Moore, JB, Masterson, JC, Madrigal-Estebas, L, Mahon, BP and O'Dea, S (2008) BMP4 induces an epithelial-mesenchymal transition-like response in adult airway epithelial cells GROWTH FACTORS, 26 (1). pp. 12-22.

Bonte, M, von dem Knesebeck, O, Siegerist, J, Marceau, L, Link, C, Arber, S, Adams, A and McKinlay, JB (2008) Women and men with coronary heart disease in three countries; Are they treated differently? Women’s Health Issues, 18 (3). pp. 191-198.

Adams, A, Buckingham, CD, Lindenmeyer, A, McKinlay, JB, Link, C, Marceau, L and Arber, S (2008) The influence of patient and doctor gender on diagnosing Coronary Heart Disease Sociology of Health and Illness, 30 (1). pp. 1-18.

Masse, NF, Homeyer, E, Marko, IP, Adams, AR, Sweeney, SJ, Dehaese, O, Piron, R, Grillot, F and Loualiche, S (2007) Temperature and pressure dependence of the recombination processes in 1.5 mu m InAs/InP (311)B quantum dot lasers APPL PHYS LETT, 91 (13), 131113.

Masse, NF, Homeyer, E, Marko, IP, Adams, AR, Sweeney, SJ, Dehaese, O, Piron, R, Grillot, F and Loualiche, S (2007) Temperature and pressure dependence of the recombination processes in 1.5 mu m InAs/InP (311)B quantum dot lasers APPLIED PHYSICS LETTERS, 91 (13), ARTN 1.

Masse, NF, Adams, AR and Sweeney, SJ (2007) Experimental determination of the band gap dependence of Auger recombination in InGaAs/InP multiple quantum well lasers at room temperature APPLIED PHYSICS LETTERS, 90 (16), ARTN 1.

Masse, NF, Adams, AR and Sweeney, SJ (2007) Experimental determination of the band gap dependence of Auger recombination in InGaAs/InP multiple quantum well lasers at room temperature APPLIED PHYSICS LETTERS, 90 (16), ARTN 1.

Ng, JS, Soong, WM, Steer, MJ, Hopkinson, M, David, JPR, Chamings, J, Sweeney, SJ and Adams, AR (2007) Long wavelength bulk GaInNAs p-i-n photodiodes lattice matched to GaAs JOURNAL OF APPLIED PHYSICS, 101 (6), ARTN 0.

Ng, JS, Soong, WM, Steer, MJ, Hopkinson, M, David, JPR, Chamings, J, Sweeney, SJ and Adams, AR (2007) Long wavelength bulk GaInNAs p-i-n photodiodes lattice matched to GaAs JOURNAL OF APPLIED PHYSICS, 101 (6), ARTN 0.

Marko, P, Adams, AR, Sweeney, SJ, Whitbread, ND, Ward, AJ, Asplin, B and Robbins, J (2007) The influence of carrier density non-pinning on the output power of 1.55 μm lasers at high temperature Optics InfoBase Conference Papers.

Ng, JS, Soong, WM, Steer, MJ, Hopkinson, M, David, JPR, Chamings, J, Adams, AR, Sweeney, SJ and Allam, J (2007) GaInNAs lattice-matched to GaAs for photodiodes Conference Proceedings - International Conference on Indium Phosphide and Related Materials. pp. 347-349.

Arber, S, McKinlay, J, Adams, A, Marceau, L, Link, C and O'Donnell, A (2007) Patient characteristics and inequalities in doctors’ diagnostic and management strategies in relation to CHD: A video-simulation experiment Social Science & Medicine, 62 (1). pp. 103-115.

McKinlay, J, Link, C, Arber, S, Marceau, L, O'Donnell, A and Adams, A (2006) How do doctors in different countries manage the same patient? Results of a factorial experiment Health Services Research, 41 (6). pp. 2182-2200.

Jin, S. R., Ahmad, C. N., Sweeney, S. J., Adams, A. R., Murdin, B. N., Page, H., Marcadet, X., Sirtori, C. and Tomić, S. (2006) Spectroscopy of GaAs/AlGaAs quantum-cascade lasers using hydrostatic pressure Applied Physics Letters, 221105 (2006).

Jin, SR, Ahmad, CN, Sweeney, SJ, Adams, AR, Murdin, BN, Page, H, Marcadet, X, Sirtori, C and Tomic, S (2006) Spectroscopy of GaAs/AlGaAs quantum-cascade lasers using hydrostatic pressure APPLIED PHYSICS LETTERS, 89 (22), ARTN 2.

Masse, NF, Sweeney, SJ, Marko, IP, Adams, AR, Hatori, N and Sugawara, M (2006) Temperature dependence of the gain in p-doped and intrinsic 1.3 mu m InAs/GaAs quantum dot lasers APPL PHYS LETT, 89 (19), 191118.

Masse, NF, Sweeney, SJ, Marko, IP, Adams, AR, Hatori, N and Sugawara, M (2006) Temperature dependence of the gain in p-doped and intrinsic 1.3 mu m InAs/GaAs quantum dot lasers APPLIED PHYSICS LETTERS, 89 (19), ARTN 1.

O'Brien, K., Sweeney, S. J., Adams, A. R., Murdin, B. N, Salhi, A., Rouillard, Y. and Joullié, A. (2006) Recombination processes in midinfrared InGaAsSb diode lasers emitting at 2.37 µm Applied Physics Letters, 051104 (2006).

O'Brien, K, Sweeney, SJ, Adams, AR, Murdin, BN, Salhi, A, Rouillard, Y and Joullie, A (2006) Recombination processes in midinfrared InGaAsSb diode lasers emitting at 2.37 mu m APPLIED PHYSICS LETTERS, 89 (5), ARTN 0.

Adams, A, Buckingham, CD, Arber, S, McKinlay, JB, Marceau, L and Link, C (2006) The influence of patient's age on clinical decision-making about coronary heart disease in the USA and the UK AGEING & SOCIETY, 26. pp. 303-321.

Abel, ML, Adams, ANN, Kinloch, AJ, Shaw, SJ and Watts, JF (2006) The effects of surface pretreatment on the cyclic-fatigue characteristics of bonded aluminium-alloy joints International Journal of Adhesion and Adhesives, 26 (1-2). pp. 50-61.

O'Brien, K, Sweeney, S J, Adams, A R, Murdin, B N, Salhi, A, Rouillard, Y and Joullie, A (2006) Recombination Processes in Midinfrared InGaAsSb Diode Lasers Emitting at 2.37 mu m Applied Physics Letters, 89 (5).

Jin, S R, Ahmad, C N, Sweeney, S J, Adams, A R, Murdin, B N, Page, H, Marcadet, X, Sirtori, C and Tomic, S (2006) Spectroscopy of GaAs/AlGaAs Quantum-Cascade Lasers Using Hydrostatic Pressure Applied Physics Letters, 89 (22).

Murdin, BN, Adams, AR and Sweeney, SJ (2006) Band structure and high-pressure measurements Springer Series in Optical Sciences, 118. pp. 93-127.

Marko, IP, Masse, NF, Sweeney, SJ, Andreev, AD, Adams, AR, Hatori, N and Sugawara, M (2005) Carrier transport and recombination in p-doped and intrinsic 1.3 mu m InAs/GaAs quantum-dot lasers APPLIED PHYSICS LETTERS, 87 (21), ARTN 2.

Fehse, R, O'Reilly, EP, Sweeney, SJ, Adams, AR, McConville, D, Riechert, H and Geelhaar, L (2005) Investigation of carrier recombination processes and transport properties in GaInAsN/GaAs quantum wells AIP Conference Proceedings, 772. pp. 985-986.

Jin, S. R., Sweeney, S. J., Ahmad, C. N., Adams, A. R. and Murdin, B. N. (2004) Radiative and Auger recombination in 1.3 µm InGaAsP and 1.5 µm InGaAs quantum-well lasers measured under high pressure at low and room temperatures Applied Physics Letters, 357 (2004).

Jin, SR, Sweeney, SJ, Ahmad, CN, Adams, AR and Murdin, BN (2004) Radiative and Auger recombination in 1.3 mu m InGaAsP and 1.5 mu m InGaAs quantum-well lasers measured under high pressure at low and room temperatures APPLIED PHYSICS LETTERS, 85 (3). pp. 357-359.

Jin, S R, Sweeney, S J, Ahmad, C N, Adams, A R and Murdin, B N (2004) Radiative and Auger Recombination in 1.3 mu m InGaAsP and 1.5 mu m InGaAs Quantum-well Lasers Measured Under High Pressure at Low and Room Temperatures Applied Physics Letters, 85 (3).

Ngarize, S, Adams, A and Howell, NK (2004) Studies on egg albumen and whey protein interactions by FT-Raman spectroscopy and rheology FOOD HYDROCOLLOIDS, 18 (1). pp. 49-59.

Sweeney, Stephen, Lyons, LJ, Adams, Alfred and Lock, DA (2003) Direct measurement of facet temperature up to melting point and COD in high-power 980-nm semiconductor diode lasers IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 9 (5). pp. 1325-1332.

Jin, SR, Sweeney, Stephen, Tomic, S, Adams, Alfred and Riechert, H (2003) High-pressure studies of recombination mechanisms in 1.3-mu m GaInNAs quantum-well lasers IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 9 (5). pp. 1196-1201.

Knowles, G, Fehse, R, Tomic, S, Sweeney, Stephen, Sale, TE, Adams, Alfred, O'Reilly, P, Steinle, G and Riechert, H (2003) Investigation of 1.3-mu m GaInNAs vertical-cavity surface-emitting lasers (VCSELs) using temperature, high-pressure, and modelling techniques IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 9 (5). pp. 1202-1208.

Tomic, S, O'Reilly, EP, Fehse, R, Sweeney, Stephen, Adams, Alfred, Andreev, Aleksey, Choulis, SA, Hosea, Thomas and Riechert, H (2003) Theoretical and experimental analysis of 1.3-mu m InGaAsN/GaAs lasers IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 9 (5). pp. 1228-1238.

Marko, I P, Andreev, A D, Adams, A R, Krebs, R, Reithmaier, J P and Forchel, A (2003) The Role of Auger Recombination in InAs 1.3-/mu m Quantum-Dot Lasers Investigated Using High Hydrostatic Pressure IEEE Journal of Selected Topics in Quantum Electronics, 9 (5).

Jin, SR, Sweeney, SJ, Tomic, S, Adams, AR and Riechert, H (2003) Unusual increase of the Auger recombination current in 1.3 mu m GaInNAs quantum-well lasers under high pressure APPLIED PHYSICS LETTERS, 82 (14). pp. 2335-2337.

Choulis, S. A., Andreev, A., Merrick, M., Adams, A. R., Murdin, B. N., Krier, A. and Sherstnev, V. V. (2003) High-pressure measurements of mid-infrared electroluminescence from InAs light-emitting diodes at 3.3 µm Applied Physics Letters, 1149 (2003).

Marko, IP, Andreev, AD, Adams, AR, Krebs, R, Reithmaier, JP and Forchel, A (2003) Importance of Auger recombination in InAs 1.3 mu m quantum dot lasers ELECTRONICS LETTERS, 39 (1). pp. 58-59.

Choulis, S A, Andreev, A, Merrick, M, Adams, A R, Murdin, B N, Krier, A and Sherstnev, V V (2003) High-Pressure Measurements of Mid-Infrared Electroluminescence from InAs Light-Emitting Diodes at 3.3&#956m Applied Physics Letters, 82 (8). pp. 1149-1151.

Marko, I P, Andreev, A D, Adams, A R, Krebs, R, Reithmaier, J P and Forchel, A (2003) The Importance of Auger Recombination in InAs 1.3 um Quantum Dot Lasers Electronics Letters, 58 (59).

Marko, IP, Andreev, AD, Adams, AR, Krebs, R, Reithmaier, JP and Forchel, A (2003) Auger recombination in 1.3-μm InAs/GaInAs quantum dot lasers studied using high pressure Conference on Lasers and Electro-Optics Europe - Technical Digest. p. 175.

O'Reilly, EP, Fahy, S, Lindsay, A, Tomić, S, Fehse, R, Adams, AR, Sweeney, SJ, Andreev, AD, Klar, PJ, Grüning, H and Riechert, H (2003) Novel electronic and optoelectronic properties of GaInNAs and related alloys OSA Trends in Optics and Photonics Series, 88. pp. 523-525.

Murdin, B. N., Adams, A. R., Murzyn, P., Pidgeon, C. R., Bradley, I. V., Wells, J-P. R., Matsuda, Y. H., Miura, N., Burke, T. and Johnson, A. D. (2002) Band anticrossing in dilute InN<i><sub>x</i></sub>Sb<i><sub>1–x</i></sub> Applied Physics Letters, 256 (2002).

Fehse, R, Tomic, S, Adams, AR, Sweeney, SJ, O'Reilly, EP, Andreev, A and Riechert, H (2002) A quantitative study of radiative, Auger, and defect related recombination processes in 1.3-mu m GaInNAs-based quantum-well lasers IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 8 (4). pp. 801-810.

Jin, SR, Fehse, R, Sweeney, SJ, Knowles, G, Adams, AR, O'Reilly, EP, Reichert, H, Illek, S, Egorov, AY, Thijs, PJA, Uchida, T and Fujii, T (2002) Modal refractive index of 1.3 mu m InGaAsP, AlGaInAs and GaInNAs semiconductor lasers under high hydrostatic pressure ELECTRONICS LETTERS, 38 (7). pp. 325-327.

Sweeney, SJ, Lyons, LJ, Lock, D and Adams, AR (2002) Direct measurement of facet temperature up to the melting point and COD in high power 980 nm semiconductor diode lasers Conference Digest - IEEE International Semiconductor Laser Conference. pp. 161-162.

Tomić, S, Fehse, R, Choulis, SA, O'Reilly, EP, Adams, AR, Sweeney, SJ, Andreev, AD, Hosea, TJC and Riechert, H (2002) Experimental and theoretical analysis of the recombination processes in GaInNAs 1.3 μm Lasers Conference Digest - IEEE International Semiconductor Laser Conference. pp. 41-42.

Jin, SR, Sweeney, SJ, Knowles, G, Adams, AR, Higashi, T, Riechert, H and Thijs, PJA (2002) Optical investigation of recombination processes in GaInNAs, InGaAsP and AlGaInAs quantum-well lasers using hydrostatic pressure Conference Digest - IEEE International Semiconductor Laser Conference. pp. 83-84.

Sweeney, SJ, Jin, SR, Fehse, R, Adams, AR, Higashi, T, Riechert, H and Thijs, PJA (2002) A comparison of the thermal stability of InGaAsP, AlGaInAs and GaInNAs quantum-well lasers for 1.3 μm operation Conference Digest - IEEE International Semiconductor Laser Conference. pp. 43-44.

Knowles, G, Fehse, R, Tomić, S, Sweeney, SJ, Sale, TE, Adams, AR, O'Reilly, EP, Steinle, G and Riechert, H (2002) The temperature and pressure dependence of 1.3 μm GaInNAs vertical-cavity surface emitting lasers (VCSELs) Conference Digest - IEEE International Semiconductor Laser Conference. pp. 139-140.

Fehse, R, Jin, S, Sweeney, SJ, Adams, AR, O'Reilly, EP, Riechert, H, Illek, S and Egorov, AY (2001) Evidence for large monomolecular recombination contribution to threshold current in 1.3 mu m GaInNAs semiconductor lasers ELECTRONICS LETTERS, 37 (25). pp. 1518-1520.

Knowles, G, Sweeney, SJ, Sale, TE and Adams, AR (2001) Self-heating effects in red (665 nm) VCSELs IEE PROCEEDINGS-OPTOELECTRONICS, 148 (5-6), PII 10.104. pp. 256-260.

Murdin, B. N., Kamal-Saadi, M., Lindsay, A., O'Reilly, E. P., Adams, A. R., Nott, G. J., Crowder, J. G., Pidgeon, C. R., Bradley, I. V., Wells, J-P. R., Burke, T., Johnson, A. D. and Ashley, T. (2001) Auger recombination in long-wavelength infrared InN<i><sub>x</i></sub>Sb<i><sub>1–x</i></sub> alloys Applied Physics Letters, 1568 (2001).

Fehse, R, Sweeney, SJ, Adams, AR, O'Reilly, EP, Egorov, AY, Riechert, H and Illek, S (2001) Insights into carrier recombination processes in 1.3 mu m GaInNAs-based semiconductor lasers attained using high pressure ELECTRONICS LETTERS, 37 (2). pp. 92-93.

Knowles, G, Sweeney, SJ, Sale, TE and Adams, AR (2001) Assessing the performance of visible (665 nm) vertical cavity surface emitting lasers using high pressure and low temperature techniques PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 223 (2). pp. 581-585.

Sale, TE, Sweeney, SJ, Knowles, G and Adams, AR (2001) Gain-cavity alignment in efficient visible (660 nm) VCSELs studied using high pressure techniques PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 223 (2). pp. 587-591.

Sweeney, SJ, Knowles, G, Sale, TE and Adams, AR (2001) Quantifying the effect of indirect carrier leakage on visible Al(GaInP) lasers using high pressures and low temperatures PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 223 (2). pp. 567-572.

Sweeney, SJ, Higashi, T, Andreev, A, Adams, AR, Uchida, T and Fujii, T (2001) Superior temperature performance of 1.3 mu m AlGaInAs-Based semiconductor lasers investigated at high pressure and low temperature PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 223 (2). pp. 573-579.

Sweeney, SJ, Adams, AR, O'Reilly, EP, Silver, M and Thijs, PJA (2000) Effect of auger generated hot-holes on 1.5-μm InGaAs(P)-based quantum well semiconductor lasers Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest. pp. 391-392.

Higashi, T, Sweeney, SJ, Phillips, AF, Adams, AR, O'Reilly, EP, Uchida, T and Fujii, T (1999) Experimental analysis of temperature dependence in 1.3-mu m AlGaInAs-InP strained MQW lasers IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 5 (3). pp. 413-419.

Phillips, AF, Sweeney, SJ, Adams, AR and Thijs, PJA (1999) The temperature dependence of 1.3-and 1.5-mu m compressively strained InGaAs(P) MQW semiconductor lasers IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 5 (3). pp. 401-412.

Higashi, T, Sweeney, SJ, Phillips, AF, Adams, AR, O'Reilly, EP, Uchida, T and Fujii, T (1999) Observation of reduced nonradiative current in 1.3-mu m AlGaInAs-InP strained MQW lasers IEEE PHOTONICS TECHNOLOGY LETTERS, 11 (4). pp. 409-411.

Sweeney, SJ, Phillips, AF, Adams, AR, O'Reilly, EP and Thijs, PJA (1998) Determination of the influence of Auger recombination on the threshold current of 1.3 μm and 1.5 μm InGaAs(P) strained-layer lasers and its variation with temperature Conference Digest - IEEE International Semiconductor Laser Conference. pp. 63-64.

Higashi, T, Sweeney, SJ, Phillips, AF, Adams, AR, O'Reilly, EP, Uchida, T and Fujii, T (1998) Observation of reduced non-radiative recombination current in 1.3-μm AlGaInAs/InP multiple-quantum-well lasers Conference Digest - IEEE International Semiconductor Laser Conference. pp. 61-62.

Sweeney, SJ, Higashi, T, Adams, AR, Uchida, T and Fujii, T (1998) Improved temperature dependence of 1.3 mu m AlGalnAs-based MQW semiconductor diode lasers revealed by hydrostatic pressure ELECTRONICS LETTERS, 34 (22). pp. 2130-2132.

Sweeney, SJ, Phillips, AF, Adams, AR, O'Reilly, EP and Thijs, PJA (1998) The effect of temperature dependent processes on the performance of 1.5-mu m compressively strained InGaAs(P) MQW semiconductor diode lasers IEEE PHOTONICS TECHNOLOGY LETTERS, 10 (8). pp. 1076-1078.

Sweeney, SJ, Phillips, AF, Adams, AR, O'Reilly, EP, Silver, M and Thijs, PJA (1998) Transition from radiative to nonradiative recombination in 1.3-μm and 1.5-μm InGaAs(P) multiple quantum well semiconductor diode lasers Conference on Lasers and Electro-Optics Europe - Technical Digest.

Adams, AR, Pollard, RD and Snowden, CM (1997) A method-of-moments study of strip dipole antennas in rectangular waveguide IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 45 (10). pp. 1756-1766.

Heasman, KC, O'Reilly, EP and Adams, AR (1989) Characterization and Design of Semiconductor Lasers Using Strain NATO ASI Series, 189. pp. 279-301.

Adams, AR, Heasman, KC and Hilton, J (1987) A reassessment of intervalence band absorption in 1.6μm (GaIn)(AsP)/InP Semiconductor Science and Technology, 2 (12). pp. 761-764.

Conference or Workshop Item

Adams, AR, Marko, IP, Mukherjee, J, Sweeney, SJ, Gocalinska, A, Pelucchi, E and Corbett, B (2014) Semiconductor Quantum Well Lasers with a Temperature Insensitive Threshold Current In: 24th IEEE International Semiconductor Laser Conference (ISLC), 2014-09-07 - 2014-09-10, Palma de Mallorca, SPAIN.

Adams, Alfred, Marko, Igor, Mukherjee, J, Sweeney, Stephen, Gocalinska, A, Pelucchi, E and Corbett, B (2014) Semiconductor quantum well lasers with a temperature insensitive threshold current

Crutchley, BG, Marko, IP, Adams, AR and Sweeney, SJ (2010) Efficiency limitations of green InGaN LEDs and laser diodes In: ISLC 2010, 2010-09-26 - 2010-09-30, Kyoto, Japan.

Ng, JS, Tan, SL, Goh, YL, Tan, CH, David, JPR, Allam, J, Sweeney, SJ and Adams, AR (2010) InGaAsN as absorber in APDs for 1.3 micron wavelength applications In: IPRM 2010, 2010-05-31 - 2010-06-04, Kagawa, Japan.

Tan, SL, Tan, LJJ, Goh, YL, Zhang, S, Ng, JS, David, JPR, Marko, IP, Allam, J, Sweeney, SJ and Adams, AR (2010) Reduction of dark current and unintentional background doping in InGaAsN photodetectors by ex situ annealing In: Optical Sensing and Detection, 2010-04-12 - 2010-04-15, Brussels, Belgium.

Sayid, SA, Marko, IP, Adams, AR, Sweeney, SJ, Barrios, P and Poole, P (2010) Thermal behavior of 1.55 μm (100) InAs/InP-based quantum dot lasers In: ISLC 2010, 2010-09-26 - 2010-09-30, Kyoto, Japan.

Ikyo, AB, Marko, IP, Adams, AR, Sweeney, SJ, Bachmann, A, Kashani-Shirazi, K and Amann, M-C (2009) Gain peak-cavity mode alignment optimisation in buried tunnel junction mid-infrared GaSb vertical cavity surface emitting lasers using hydrostatic pressure In: Semiconductor and Integrated Optoelectronics Conference (SIOE 2009), 2009 - ?, Cardiff, WALES.

Chamings, J, Ahmed, S, Adams, AR, Sweeney, SJ, Odnoblyudov, VA, Tu, CW, Kunert, B and Stolz, W (2009) Band anti-crossing and carrier recombination in dilute nitride phosphide based lasers and light emitting diodes In: 13th International Conference on High Pressure Semiconductor Physics (HPSP-13), 2008-07-22 - 2008-07-25, Fortaleza, BRAZIL.

Marko, IP, Adams, AR, Sweeney, SJ, Teissier, R, Baranov, AN and Tomic, S (2009) Evidence of carrier leakage into the L-valley in InAs-based quantum cascade lasers under high hydrostatic pressure In: 13th International Conference on High Pressure Semiconductor Physics (HPSP-13), 2008-07-22 - 2008-07-25, Fortaleza, BRAZIL.

Tan, LJJ, Soong, WS, Tan, SL, Goh, YL, Steer, MJ, Ng, JS, David, JPR, Marko, IP, Chamings, J, Allam, J, Sweeney, SJ and Adams, AR (2009) Dark current mechanisms in InxGa1-xAs 1-yNy In: LEOS '09, 2009-10-04 - 2009-10-08, Belek-Antalya, Turkey.

Adams, AR, Marko, IP, Sweeney, SJ, Teissier, R, Baranov, AN and Tomić, S (2009) The effect of hydrostatic pressure on the operation of quantum cascade lasers In: Quantum Sensing and Nanophotonic Devices VI, 2009-01-25 - 2009-01-28, San Jose, USA.

Marko, IP, Adams, AR, Sweeney, SJ, Teissier, R, Baranov, AN and Tomic, S (2008) Gamma-L scattering in InAs-based quantum cascade lasers studied using high hydrostatic pressure In: IEEE 21st International Semiconductor Laser Conference, 2008-09-14 - 2008-09-18, Sorrento, ITALY.

Chamings, J, Adams, AR, Sweeney, SJ, Kunert, B, Volz, K and Stolz, W (2008) Thermal properties of Silicon compatible GaNAsP SQW lasers In: IEEE 21st International Semiconductor Laser Conference, 2008-09-14 - 2008-09-18, Sorrento, ITALY.

Soong, WM, Ng, JS, Steer, MJ, Hopkinson, M, David, JPR, Chamings, J, Sweeney, SJ, Adams, AR and Allam, J (2008) Dark current mechanisms in bulk GaInNAs photodiodes In: IPRM 2008, 2008-05-25 - 2008-05-29, Versailles, France.

Crowley, MT, Marko, IP, Masse, NF, Andreev, AD, Sweeney, SJ, O'Reilly, EP and Adams, AR (2008) The importance of recombination via excited states in InAs/GaAs 1.3μm quantum dot lasers In: 21st ISLC 2008, 2008-09-14 - 2008-09-18, Sorento, Italy.

Moore, JB, Adams, A, Molloy, EL and O'Dea, S (2007) BMP2 and BMP4 differentially modulate extracellular matrix-related gene expression in human lung epithelial cells In: Experimental Biology 2007 Annual Meeting, 2007-04-28 - 2007-05-02, Washington, DC.

Marko, IP, Adams, AR, Sweeney, SJ, Masse, NF, Krebs, R, Reithmaier, JP, Forchel, A, Mowbray, DJ, Skolnick, MS, Liu, HY, Groom, KM, Hatori, N and Sugawara, M (2007) Band gap dependence of the recombination processes in InAs/GaAs quantum dots studied using hydrostatic pressure In: 12th International Conference on High Pressure Semiconductor Physics (HPSP-12), 2006-07-31 - 2006-08-03, Barcelona, SPAIN.

O'Brien, K, Adams, AR, Sweeney, SJ, Jin, SR, Ahmad, CN, Murdin, BN, Canedy, CL, Vurgaftman, I and Meyer, JR (2007) High pressure studies of mid-infrared type-II "W" diode lasers at cryogenic temperatures In: 12th International Conference on High Pressure Semiconductor Physics (HPSP-12), 2006-07-31 - 2006-08-03, Barcelona, SPAIN.

Marko, IP, Masse, NF, Sweeney, SJ, Adams, AR, Hatori, N, Sugawara, M, Jantsch, W and Schaffler, F (2007) Recombination, transport and loss mechanisms in p-doped InAs/GaAs quantum dots In: 28th International Conference on the Physics of Semiconductors (ICPS-28), 2006-07-24 - 2006-07-28, Vienna, AUSTRIA.

McConville, DG, Sweeney, SJ, Adams, AR, Tomic, S and Riechert, H (2007) Temperature and pressure dependence of the recombination mechanisms in 1.3 pm and 1.5 pm GaInNAs lasers In: 12th International Conference on High Pressure Semiconductor Physics (HPSP-12), 2006-07-31 - 2006-08-03, Barcelona, SPAIN.

O'Brien, K, Sweeney, SJ, Adams, AR, Jin, SR, Ahmad, CN, Murdin, BN, Salhi, A, Rouillard, Y and Joullie, A (2007) Carrier recombination mechanisms in mid-infrared GaInAsSb quantum well lasers In: 12th International Conference on High Pressure Semiconductor Physics (HPSP-12), 2006-07-31 - 2006-08-03, Barcelona, SPAIN.

Marko, IP, Adams, AR, Sweeney, SJ, Whitbread, ND, Ward, AJ, Asplin, B and Robbins, DJ (2007) The influence of carrier density non-pinning on the output power of 1.55 μm lasers at high temperature In: CLEOE-IQEC 2007, 2007-06-17 - 2007-06-23, Munich, Germany.

Adams, AR and Sweeney, SJ (2006) The physics controlling the sensitivity of semiconductor lasers to high temperatures In: Conference on Optical Fiber Communications/National Fiber Optic Engineers Conference, 2006-03-05 - 2006-03-10, Anaheim, CA.

O'Brien, K, Adams, AR, Sweeney, SJ, Jin, SR, Ahmad, CN, Murdin, BN, Canedy, CL, Vurgaftman, I and Meyer, JR (2006) Analysis of the major loss processes in mid-infrared type-II "W" diode lasers

Massé, NF, Sweeney, SJ, Marko, IP, Andreev, AD, Adams, AR, Hatori, N and Sugawara, M (2006) Intrinsic limitations of p-doped and undoped 1.3 μm InAs/GaAs quantum dot lasers In: ISLC 2006, 2006-09-17 - 2006-09-21, Hawaii, USA.

Marko, Igor, Masse, N, Sweeney, SJ, Adams, AR, Sellers, IR, Mowbray, DJ, Skolnick, MS, Liu, HY and Groom, KM (2005) Effect of gain saturation and nonradiative recombination on the thermal characteristics of InAs/GaAs 1.3 mu m quantum dot lasers In: 18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 22-28 Oct 2005, Sydney, NSW, Australia.

Marko, Igor, Adams, Alfred, Sweeney, Stephen, Mowbray, DJ, Skolnick, MS, Liu, HYY and Groom, KM (2005) Recombination and loss mechanisms in low-threshold InAs-GaAs 1.3-mu m quantum-dot lasers In: 19th IEEE International Semiconductor Laser Conference, 2004-09-21 - 2004-09-25, Matsue, JAPAN.

Sweeney, SJ, Lock, DA, Adams, AR, Menendez, J and VanDeWalle, CG (2005) Carrier recombination in InGaAs(P) quantum well laser structures: Band gap and temperature dependence In: 27th International Conference on the Physics of Semiconductors (ICPS-27), 2004-07-26 - 2004-07-30, Flagstaff, AZ.

Marko, IP, Andreev, AD, Sweeney, SJ, Adams, AR, Krebs, R, Deubert, S, Reithmaier, JP, Forchel, A, Menendez, J and VanDeWalle, CG (2005) The influence of auger processes on recombination in long-wavelength InAs/GaAs quantum dots In: 27th International Conference on the Physics of Semiconductors (ICPS-27), 2004-07-26 - 2004-07-30, Flagstaff, AZ.

Masse, NF, Marko, Igor, Sweeney, Stephen, Adams, Alfred, Hatori, N and Sugarawa, M (2005) The influence of p-doping on the temperature sensitivity of 1.3 mu m quantum dot lasers In: 2005 IEEE LEOS Annual Meeting Conference (LEOS), 22-28 Oct 2005, Sydney, Australia.

Lock, D, Sweeney, SJ, Adams, AR, Deubner, S, Klopf, F, Reithmaier, JP and Forchel, A (2004) Carrier leakage suppression utilising short-period superlattices in 980 nm InGaAs/GaAs quantum well lasers In: 11th International Conference on High-Pressure Semiconductor Physics (HPSP-11), 2004-08-02 - 2004-08-05, Berkeley, CA.

Sweeney, SJ, Jin, SR, Ahmad, CN, Adams, AR and Murdin, BN (2004) Carrier recombination processes in 1.3 mu m and 1.5 mu m InGaAs(P)-based lasers at cryogenic temperatures and high pressures In: 11th International Conference on High-Pressure Semiconductor Physics (HPSP-11), 2004-08-02 - 2004-08-05, Berkeley, CA.

Lock, D, Sweeney, SJ and Adams, AR (2004) Pressure induced wavelength dependence of catastrophic optical damage in 980 nm semiconductor diode lasers In: 11th International Conference on High-Pressure Semiconductor Physics (HPSP-11), 2004-08-02 - 2004-08-05, Berkeley, CA.

Marko, IP, Sweeney, SJ, Adams, AR, Jin, SR, Murdin, BN, Schwertberger, R, Somers, A, Reithmaier, JP and Forchel, A (2004) Recombination mechanisms in InAs/InP quantum dash lasers studied using high hydrostatic pressure In: 11th International Conference on High-Pressure Semiconductor Physics (HPSP-11), 2004-08-02 - 2004-08-05, Berkeley, CA.

Sweeney, SJ, McConville, D, Masse, NF, Bouyssou, RX, Adams, AR, Ahmad, CN and Hanke, C (2004) Temperature and pressure dependence of recombination processes in 1.5 mu m InGaAlAs/InP-based quantum well lasers In: 11th International Conference on High-Pressure Semiconductor Physics (HPSP-11), 2004-08-02 - 2004-08-05, Berkeley, CA.

Fehse, R, Sweeney, SJ, Adams, AR, McConville, D, Riechert, H and Geelhaar, L (2004) Influence of growth temperature on carrier recombination in GaInNAs-based lasers In: Symposium on Dilute Nitride and Related Mismatched Semiconductor Alloys held at the 2004 Spring Meeting of the EMRS, 2004-05-24 - 2004-05-28, Strasbourg, FRANCE.

Marko, I. P., Adams, A. R., Sweeney, S. J., Jin, S. R., Murdin, B. N., Schwertberger, R., Somers, A., Reithmaier, J. P. and Forchel, A. (2004) Experimental investigations into the thermal properties of 1.5-1.8-/spl mu/m InAs/InP quantum dash lasers

Marko, I P, Adams, A R, Sweeney, S J, Jin, S R, Murdin, B N, Schwertberger, R, Somers, A, Reithmaier, J P and Forchel, A (2004) Experimental Investigations into the Thermal Properties of 1.5-1.8&#956m InAs/InP Quantum Dash Lasers In: 2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest..

Marko, IP, Adams, AR, Sweeney, SJ, Jin, SR, Murdin, BN, Schwertberger, R, Somers, A, Reithmaier, JP and Forchel, A (2004) Experimental investigations into the thermal properties of 1.5-1.8-mu m InAs/InP quantum dash lasers In: 19th IEEE International Semiconductor Laser Conference, 2004-09-21 - 2004-09-25, Matsue, JAPAN.

Fehse, R, Sweeney, Stephen, Adams, Alfred, McConville, D, Riechert, H and Geelhaar, L (2004) Influence of growth temperature on defect density in 1.3 mu m GaInNAs-based lasers In: 19th IEEE International Semiconductor Laser Conference, 2004-09-21 - 2004-09-25, Matsue, JAPAN.

Marko, Igor, Adams, Alfred, Sweeney, Stephen, Sellers, IR, Mowbray, DJ, Skolnick, MS, Liu, HY and Groom, KM (2004) Recombination and loss mechanisms in low-threshold InAs/GaAs 1.3 mu m quantum dot lasers In: 19th IEEE International Semiconductor Laser Conference, 2004-09-21 - 2004-09-25, Matsue, JAPAN.

Sweeney, Stephen, McConville, D, Jin, SR, Ahmad, CN, Masse, NF, Bouyssou, RX, Adams, Alfred and Hanke, C (2004) Temperature and wavelength dependence of recombination processes in 1.5 mu m InGaAlAs/InP-based lasers In: 16th International Conference on Indium Phosphide and Related Materials, 2004-05-31 - 2004-06-04, Kagoshima, JAPAN.

Fehse, R, Marko, I and Adams, AR (2003) Long wavelength lasers on GaAs substrates In: 6th International Conference on Optoelectronics, Fibre Optics and Photonics, 2002-12 - ?, MUMBAI, INDIA.

Fehse, R, Adams, AR, Sweeney, SJ, Tomic, S, Reichart, H and Ramakrishnan, A (2003) Carrier recombination processes in MOVPE and MBE grown 1.3 mu m GaInNAs edge emitting lasers In: Spring Meeting of the European-Materials-Research-Society (E-MRS), 2002-06-18 - 2002-06-21, STRASBOURG, FRANCE.

Lock, D, Sweeney, SJ, Adams, AR and Robbins, DJ (2003) Auger recombination in InGaAs/AlGaAs-based MQW semiconductor lasers emitting at 980 nm In: 10th International Conference on High Pressures in Semiconductor Physics (HPSP-X), 2002-08-05 - 2002-08-08, UNIV SURREY, GUILDFORD, ENGLAND.

Jin, SR, Sweeney, SJ, Adams, AR and Thijs, PJA (2003) Coupling of large optical loss with Auger recombination in 1.3 mu m InGaAsP lasers investigated using hydrostatic pressure In: 10th International Conference on High Pressures in Semiconductor Physics (HPSP-X), 2002-08-05 - 2002-08-08, UNIV SURREY, GUILDFORD, ENGLAND.

Knowles, G, Tomic, S, Jin, S, Fehse, R, Sweeney, SJ, Sale, TE and Adams, AR (2003) Gain-cavity alignment profiling of 1.3 mu m emitting GaInNAs vertical cavity surface emitting lasers (VCSELs) using high pressure techniques In: 10th International Conference on High Pressures in Semiconductor Physics (HPSP-X), 2002-08-05 - 2002-08-08, UNIV SURREY, GUILDFORD, ENGLAND.

Marko, IP, Andreev, AD, Adams, AR, Krebs, R, Reithmaier, JP and Forchel, A (2003) High-pressure studies of the recombination processes, threshold currents, and lasing wavelengths in InAs/GaInAs quantum dot lasers In: 10th International Conference on High Pressures in Semiconductor Physics (HPSP-X), 2002-08-05 - 2002-08-08, UNIV SURREY, GUILDFORD, ENGLAND.

Sweeney, SJ, Jin, SR, Tomic, S, Adams, AR, Higashi, T, Riechert, H and Thijs, PJA (2003) Hydrostatic pressure dependence of recombination mechanisms in GaInNAs, InGaAsP and AlGaInAs 1.3 mu m quantum well lasers In: 10th International Conference on High Pressures in Semiconductor Physics (HPSP-X), 2002-08-05 - 2002-08-08, UNIV SURREY, GUILDFORD, ENGLAND.

Jin, SR, Sweeney, SJ, Tomic, S, Adams, AR and Riechert, H (2003) Quantifying pressure-dependent recombination currents in GaInNAs lasers using spontaneous emission measurements In: 10th International Conference on High Pressures in Semiconductor Physics (HPSP-X), 2002-08-05 - 2002-08-08, UNIV SURREY, GUILDFORD, ENGLAND.

Jin, SR, Sweeney, SJ, Adams, AR, Higashi, T, Riechert, H and Thijs, PJA (2003) Wavelength dependence of the modal refractive index in 1.3 mu m InGaAsP, AlGaInAs and GaInNAs lasers using high pressure In: 10th International Conference on High Pressures in Semiconductor Physics (HPSP-X), 2002-08-05 - 2002-08-08, UNIV SURREY, GUILDFORD, ENGLAND.

Lock, D, Sweeney, SJ and Adams, AR (2003) Fundamental limitations of high power 980nm InGaAs/GaAs pump lasers In: 16th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2003-10-27 - 2003-10-30, TUCSON, AZ.

Sweeney, Stephen, Fehse, R, Adams, Alfred and Riechert, H (2003) Intrinsic temperature sensitivities of 1.3 mu m GaInNAs/GaAs, InGaAsP/InP and AlGaInAs/InP-based semiconductor lasers In: 16th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2003-10-27 - 2003-10-30, TUCSON, AZ.

Lock, D, Sweeney, Stephen and Adams, Alfred (2003) Wavelength dependence of catastrophic optical damage threshold in 980nm semiconductor diode lasers In: 16th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2003-10-27 - 2003-10-30, TUCSON, AZ.

Adams, AR, Fehse, R, Tomic, S, O'Reilly, EP, Andreev, A, Knowles, G, Sale, TE, Sweeney, SJ, Steinle, G, Ramakrishnan, A and Riechert, H (2002) Characterisation of 1.3pm wavelength GaInNAs/GaAs edge-emitting and vertical-cavity surface-emitting lasers using low-temperature and high-pressure In: Conference on Asia-Pacific Optical and Wireless Communication (APOC 2002), 2002-10-15 - 2002-10-18, SHANGHAI, PEOPLES R CHINA.

Fehse, R, Jin, S, Sweeney, SJ, Adams, AR, O'Reilly, EP, Illek, S, Egorov, AY and Riechert, H (2001) The temperature dependence of the recombination processes in 1.3 mu m GaInNAs-based edge emitting lasers In: 14th Annual Meeting of the IEEE Lasers-and-Electro-Optics-Society, 2001-11-11 - 2001-11-15, SAN DIEGO, CA.

Sweeney, SJ, Higashi, T, Adams, AR, Uchida, T and Fujii, T (2000) A comparison of AlGaInAs and InGaAsP-based 1.3 mu m semiconductor lasers using high pressure In: XXXVIIth Meeting of the European-High-Pressure-Research-Group (EHPRG), 1999-09-09 - 1999-09-11, UNIV MONTPELLIER, MONTPELLIER, FRANCE.

Sweeney, SJ, Adams, AR, Silver, M, O'Reilly, EP, Watling, JR, Walker, AB and Thijs, PJA (1999) Dependence of threshold current on QW position and on pressure in 1.5 mu m InGaAs(P) lasers In: 8th International Conference on High Pressure Semiconductor Physics (HPSP-VIII), 1998-08-09 - 1998-08-13, THESSALONIKI, GREECE.

Phillips, AF, Sweeney, SJ, Adams, AR and Thijs, PJA (1999) The hydrostatic pressure dependence of the threshold current in 1.3 mu m InGaAsP quantum well semiconductor diode lasers In: 8th International Conference on High Pressure Semiconductor Physics (HPSP-VIII), 1998-08-09 - 1998-08-13, THESSALONIKI, GREECE.

Adams, AR, Silver, M, OReilly, EP, Gonul, B, Phillips, AF, Sweeney, SJ and Thijs, PJA (1996) Hydrostatic pressure dependence of the threshold current in 1.5 mu m strained quantum well lasers In: 7th International Conference on High Pressure Semiconductor Physics (HPSP-VII), 1996-07-28 - 1996-07-31, SCHWABISCH GMUND, GERMANY.

Adams, AR, Pollard, RD and Snowden, CM (1996) Method of moments and time domain analyses of waveguide-based hybrid multiple device oscillators In: 1996 IEEE MTT-S International Microwave Symposium, 1996-06-17 - 1996-06-21, SAN FRANCISCO, CA.

Heasman, KC, O'Reilly, EP, Witchlow, GP, Batty, W and Adams, AR (1987) Proposal For A Low Threshold Current Long Wavelength Strained Layer Laser

Thesis

Adams, Ann. (1996) Autonomy and influence: An examination of the concepts of nurse autonomy and influence in the context of the organisational environment of acute hospital wards. Doctoral thesis, University of Surrey (United Kingdom)..

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