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Items where Author is "ADAMS, A"

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Article

DUNSTAN, DJ, DIXON, RH, KIDD, P, HOWARD, LK, WILKINSON, VA, LAMBKIN, JD, JEYNES, C, HALSALL, MP, LANCEFIELD, D, EMENY, MT, GOODHEW, PJ, HOMEWOOD, KP, SEALY, BJ and ADAMS, AR (1993) GROWTH AND CHARACTERIZATION OF RELAXED EPILAYERS OF INGAAS ON GAAS JOURNAL OF CRYSTAL GROWTH, 126 (4). pp. 589-600.

BLOOD, P, FLETCHER, ED, WOODBRIDGE, K, HEASMAN, KC and ADAMS, AR (1989) INFLUENCE OF THE BARRIERS ON THE TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT IN GAAS ALGAAS QUANTUM WELL LASERS IEEE JOURNAL OF QUANTUM ELECTRONICS, 25 (6). pp. 1459-1468.

HEASMAN, KC, BLOOD, P, ADAMS, AR and FLETCHER, ED (1987) PRESSURE-DEPENDENCE OF THE NONRADIATIVE LIFETIME IN GAAS/AIGAAS DOUBLE-HETEROSTRUCTURE LASERS JOURNAL OF APPLIED PHYSICS, 62 (8). pp. 3448-3450.

HEASMAN, KC, ADAMS, AR and PLUMB, RG (1987) SCANNING THE LASER GAIN SPECTRUM USING DISTRIBUTED FEEDBACK AND HYDROSTATIC-PRESSURE ELECTRONICS LETTERS, 23 (11). pp. 555-557.

HEASMAN, KC, ADAMS, AR, GREENE, PD and HENSHALL, GD (1987) PRESSURE-DEPENDENCE OF THRESHOLD CURRENT AND CARRIER LIFETIME IN 1.55-MU-M GAINASP LASERS ELECTRONICS LETTERS, 23 (10). pp. 492-493.

OREILLY, EP, HEASMAN, KC, ADAMS, AR and WITCHLOW, GP (1987) CALCULATIONS OF THE THRESHOLD CURRENT AND TEMPERATURE SENSITIVITY OF A (GAIN)AS STRAINED QUANTUM-WELL LASER OPERATING AT 1.55 MU-M SUPERLATTICES AND MICROSTRUCTURES, 3 (2). pp. 99-102.

HEASMAN, KC, HAYES, J, ADAMS, AR and GREENE, PD (1981) TEMPERATURE-DEPENDENCE OF THE TRANSFERRED ELECTRON THRESHOLD CURRENTIN IN1-XGAXASYP1-Y ELECTRONICS LETTERS, 17 (20). pp. 756-757.

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