Physical properties and efficiency of GaNP light emitting diodes
Chamings, J, Ahmed, S, Sweeney, SJ, Odnoblyudov, VA and Tu, CW (2008) Physical properties and efficiency of GaNP light emitting diodes APPLIED PHYSICS LETTERS, 92 (2), ARTN 0.
GaNP/GaP is promising for yellow-amber-red light emitting diodes (LEDs). In this study, pressure and temperature dependent electroluminescence and photocurrent measurements on bulk GaP/GaN0.006P0.994/GaP LED structures are presented. Below similar to 110 K, emission is observed from several localized nitrogen states. At room temperature, the band-edge energy increases weakly with pressure at a rate of +1.6 meV/kbar, substantially lower than the Gamma band gap of GaP (+9.5 meV/kbar). Thus, despite the multiplicity of nitrogen levels, the band anticrossing model reasonably describes this system based on an average of the nitrogen states. Furthermore, carrier leakage into the X minima of GaP reduces the efficiency in GaNP-LEDs with increasing pressure.
|Divisions :||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics|
|Date :||14 January 2008|
|Identification Number :||https://doi.org/10.1063/1.2830696|
|Uncontrolled Keywords :||Science & Technology, Physical Sciences, Physics, Applied, Physics, HYDROSTATIC-PRESSURE, GAINNAS ALLOYS, GAP-N, BAND, DEPENDENCE|
|Related URLs :|
|Depositing User :||Mr Adam Field|
|Date Deposited :||27 May 2010 14:05|
|Last Modified :||23 Sep 2013 18:25|
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