Physical properties and efficiency of GaNP light emitting diodes
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Chamings, J, Ahmed, S, Sweeney, SJ, Odnoblyudov, VA and Tu, CW (2008) Physical properties and efficiency of GaNP light emitting diodes APPLIED PHYSICS LETTERS, 92 (2). ? - ?. ISSN 0003-6951
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Abstract
GaNP/GaP is promising for yellow-amber-red light emitting diodes (LEDs). In this study, pressure and temperature dependent electroluminescence and photocurrent measurements on bulk GaP/GaN0.006P0.994/GaP LED structures are presented. Below similar to 110 K, emission is observed from several localized nitrogen states. At room temperature, the band-edge energy increases weakly with pressure at a rate of +1.6 meV/kbar, substantially lower than the Gamma band gap of GaP (+9.5 meV/kbar). Thus, despite the multiplicity of nitrogen levels, the band anticrossing model reasonably describes this system based on an average of the nitrogen states. Furthermore, carrier leakage into the X minima of GaP reduces the efficiency in GaNP-LEDs with increasing pressure.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | Science & Technology, Physical Sciences, Physics, Applied, Physics, HYDROSTATIC-PRESSURE, GAINNAS ALLOYS, GAP-N, BAND, DEPENDENCE |
| Divisions: | Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics |
| Related URLs: | |
| ID Code: | 89 |
| Deposited By: | Mr Adam Field |
| Deposited On: | 27 May 2010 15:05 |
| Last Modified: | 16 Nov 2012 11:28 |
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