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Single-Event Effects in Ground-Level Infrastructure During Extreme Ground-Level Enhancements

Dyer, Alexander, Hands, Alex, Ryden, Keith, Dyer, Clive, Flintoft, Ian and Ruffenach, Alexis (2020) Single-Event Effects in Ground-Level Infrastructure During Extreme Ground-Level Enhancements IEEE Transactions on Nuclear Science, 67 (6). pp. 1139-1143.

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Abstract

We take an initial look at hard single-event effects (SEEs) in power electronics and static random access memories (SRAMs) during space weather-induced extreme ground-level enhancement (GLE) events. We show that there is a significant risk of failure of silicon power metal–oxide–semiconductor field-effect transistors (MOSFETs) and insulated gate bipolar transistors (IGBTs) at ground level during a 10× February ’56 GLE. If the devices are not derated, then we find that 21% of power MOSFETs and 14% of IGBTs are, in the worst case, predicted to fail. The probability of failure increases to 68% and 52% during a once-in-a-10 000-year GLE for power MOSFETs and IGBTs, respectively. Silicon carbide devices show a lower failure rate by more than an order of magnitude, where only 2.8% are predicted to fail during a once-in-a-10 000-year GLE. It is clear that these events could disrupt critical infrastructure if mitigating precautions are not implemented.

Item Type: Article
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering
Authors :
NameEmailORCID
Dyer, Alexander
Hands, Alex
Ryden, Keithk.ryden@surrey.ac.uk
Dyer, Clive
Flintoft, Ian
Ruffenach, Alexis
Date : 24 February 2020
DOI : 10.1109/TNS.2020.2975838
Copyright Disclaimer : Copyright © 2020, IEEE
Uncontrolled Keywords : Neutrons, MOSFET, Insulated gate bipolar transistors, Silicon carbide, Silicon, Random access memory, Optical wavelength conversion
Additional Information : Embargo OK Metadata OK No Further Action
Depositing User : James Marshall
Date Deposited : 25 Aug 2020 08:44
Last Modified : 25 Aug 2020 08:44
URI: http://epubs.surrey.ac.uk/id/eprint/858486

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