University of Surrey

Test tubes in the lab Research in the ATI Dance Research

The use of HI-ERDA/RBS and NRA/RBS to depth profile N in GaAs1-xNx thin films

Smith, Richard, Plaza, J., Ghita, D., Sanchez, M, Garcia, B.J, Munoz-Martin, A. and Climent-Font, A. (2008) The use of HI-ERDA/RBS and NRA/RBS to depth profile N in GaAs1-xNx thin films The use of HI-ERDA/RBS and NRA/RBS to depth profile N in GaAs1−xNx thin films, 266 (8).

Full text not available from this repository.

Abstract

N profiles of several GaAs1−xNx epitaxial layers with different N mole fractions in the range 0 < x < 0.14 were obtained by using (1) heavy-ion elastic recoil detection analysis (HI-ERDA) along with Rutherford backscattering spectrometry (RBS) using a 35 MeV Si6+ beam, and (2) nuclear reaction analysis (NRA) with the 14N(α, p)17O reaction, also with RBS, using a 3.7 MeV 4He+ beam. The results from the two techniques are compared and the advantages, disadvantages and capabilities are discussed.

Item Type: Article
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering
Authors :
NameEmailORCID
Smith, Richardr.w.smith@surrey.ac.uk
Plaza, J.
Ghita, D.
Sanchez, M
Garcia, B.J
Munoz-Martin, A.
Climent-Font, A.
Date : 26 January 2008
DOI : 10.1016/j.nimb.2008.01.024
Copyright Disclaimer : Copyright © 2008 Published by Elsevier B.V
Uncontrolled Keywords : GaAs1−xNxHI-ERDANRA14N(α, p)17ORBS
Depositing User : James Marshall
Date Deposited : 20 Mar 2020 16:20
Last Modified : 20 Mar 2020 16:20
URI: http://epubs.surrey.ac.uk/id/eprint/854063

Actions (login required)

View Item View Item

Downloads

Downloads per month over past year


Information about this web site

© The University of Surrey, Guildford, Surrey, GU2 7XH, United Kingdom.
+44 (0)1483 300800