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Dynamic Temperature Measurements of a GaN DC/DC Boost Converter at MHz Frequencies

Matei, Cristian, Urbonas, Jonas, Votsi, Haris, Kending, Dustin and Aaen, Peter H. (2020) Dynamic Temperature Measurements of a GaN DC/DC Boost Converter at MHz Frequencies IEEE Transactions on Power Electronics.

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For reliability predictions, gallium nitride transistors require accurate estimations of the peak operating temperatures within the device. This paper presents a new application of thermoreflectance-based temperature measurements performed on a gallium nitride high electron mobility transistor. The submicron spatial and nanosecond temporal resolutions of the measurement system enables for the first time, the dynamic temperature measurement of a transistor operating up to 5 MHz. The GaN transistor is first biased in class-A and excited with a 1 MHz AC signal to demonstrate the dynamic temperature measurement. The transistor is then incorporated in a 20–40 V DC/DC boost converter to measure the dynamic temperature distributions across the semiconductor die operating under real loading conditions at 1 and 5 MHz switching frequencies. This technique captures the temperature variations that occur during the switching of the transistor and the recorded peak temperatures are 7.4

Item Type: Article
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering
Authors :
Urbonas, Jonas
Kending, Dustin
Aaen, Peter H.
Date : 8 January 2020
DOI : 10.1109/TPEL.2020.2964996
OA Location :
Uncontrolled Keywords : Thermoreflectance measurement, boost converter, gallium nitride, power transistor.
Depositing User : James Marshall
Date Deposited : 24 Feb 2020 11:07
Last Modified : 24 Feb 2020 11:07

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