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Optically modulated magnetic resonance of erbium implanted silicon.

Hughes, Mark A., Li, Heqing, Theodoropoulou, Nafsika and Carey, David (2019) Optically modulated magnetic resonance of erbium implanted silicon. Scientific Reports, 9 (1).

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Abstract

Er implanted Si is a candidate for quantum and photonic applications; however, several different Er centres are generated, and their symmetry, energy level structure, magnetic and optical properties, and mutual interactions have been poorly understood, which has been a major barrier to the development of these applications. Optically modulated magnetic resonance (OMMR) gives a spectrum of the modulation of an electron paramagnetic resonance (EPR) signal by a tuneable optical field. Our OMMR spectrum of Er implanted Si agrees with three independent measurements, showing that we have made the first measurement of the crystal field splitting of the 4I13/2 manifold of Er implanted Si, and allows us to revise the crystal field splitting of the 4I15/2 manifold. This splitting originates from a photoluminescence (PL) active O coordinated Er centre with orthorhombic C2v symmetry, which neighbours an EPR active O coordinated Er centre with monoclinic C1h symmetry. This pair of centres could form the basis of a controlled NOT (CNOT) gate.

Item Type: Article
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering
Authors :
NameEmailORCID
Hughes, Mark A.
Li, Heqing
Theodoropoulou, Nafsika
Carey, DavidDavid.Carey@surrey.ac.uk
Date : 13 December 2019
Funders : EPSRC
DOI : doi.10.1038/s41598-019-55246-z
Grant Title : UK EPSRC Grant
Copyright Disclaimer : Copyright © 2019, Springer Nature
Depositing User : James Marshall
Date Deposited : 23 Jan 2020 15:39
Last Modified : 18 Feb 2020 10:00
URI: http://epubs.surrey.ac.uk/id/eprint/853376

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