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Determination of Dimension and Conformal Arsenic Doping Profile of a FinFET by Time of Flight-Medium Energy Ion Scattering

Park, Kyungsu, Kim, Jwasoon, Min, Won Ja, Marmitt, Gabriel, England, Jonathan and Moon, Dae Won (2019) Determination of Dimension and Conformal Arsenic Doping Profile of a FinFET by Time of Flight-Medium Energy Ion Scattering ANALYTICAL CHEMISTRY.

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Abstract

We have developed a methodology that analyzes the dimensions and conformal doping profiles in fin field effect transistors (FinFET) using time-of-flight medium energy ion scattering (TOF-MEIS). The structure of a 3D FinFET and As dopant profiles were determined by comprehensive simulations of TOF-MEIS measurements made in three different scattering geometries. The width and height of a FinFET and the As doping profiles in the top, side, and bottom of fin were analyzed simultaneously. The results showed the dimension and confomal doping profile of nanostructures with complex shape can be determined by TOF-MEIS non-destructively, quantitatively, and with sub-nm depth resolution without any sputtering and matrix effects.

Item Type: Article
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering
Authors :
NameEmailORCID
Park, Kyungsu
Kim, Jwasoon
Min, Won Ja
Marmitt, Gabriel
England, Jonathanj.england@surrey.ac.uk
Moon, Dae Won
Date : 25 June 2019
Copyright Disclaimer : Copyright © 2019 American Chemical Society
Depositing User : Diane Maxfield
Date Deposited : 05 Jul 2019 10:26
Last Modified : 05 Jul 2019 10:26
URI: http://epubs.surrey.ac.uk/id/eprint/852210

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