Stable Transistors in Hydrogenated Amorphous Silicon
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Shannon, J M (2004) Stable Transistors in Hydrogenated Amorphous Silicon Applied Physics Letters, 85 (2). ISSN 00036951
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Abstract
Thin-film field-effect transistors in hydrogenated amorphous silicon are notoriously unstable due to the formation of silicon dangling bond trapping states in the accumulated channel region during operation. Here, we show that by using a source-gated transistor a major improvement in stability is obtained. This occurs because the electron quasi-Fermi level is pinned near the center of the band in the active source region of the device and strong accumulation of electrons is prevented. The use of source-gated transistors should enable stable analog circuits to be made in amorphous silicon.
| Item Type: | Article |
|---|---|
| Additional Information: | Published in <i>Applied Physics Letters,</i> Vol. 85, Iss. 2. Copyright 2004 American Institute of Physics. Click <a href=http://apl.aip.org/ >here</a> to access the journal's website. |
| Divisions: | Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Nano-Electronics Centre |
| ID Code: | 85 |
| Deposited By: | Mr Adam Field |
| Deposited On: | 27 May 2010 15:05 |
| Last Modified: | 21 Sep 2012 15:23 |
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