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Stable Transistors in Hydrogenated Amorphous Silicon

Shannon, J M (2004) Stable Transistors in Hydrogenated Amorphous Silicon Applied Physics Letters, 85 (2). ISSN 00036951

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Abstract

Thin-film field-effect transistors in hydrogenated amorphous silicon are notoriously unstable due to the formation of silicon dangling bond trapping states in the accumulated channel region during operation. Here, we show that by using a source-gated transistor a major improvement in stability is obtained. This occurs because the electron quasi-Fermi level is pinned near the center of the band in the active source region of the device and strong accumulation of electrons is prevented. The use of source-gated transistors should enable stable analog circuits to be made in amorphous silicon.

Item Type: Article
Additional Information: Published in <i>Applied Physics Letters,</i> Vol. 85, Iss. 2. Copyright 2004 American Institute of Physics. Click <a href=http://apl.aip.org/ >here</a> to access the journal's website.
Divisions: Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Nano-Electronics Centre
Depositing User: Mr Adam Field
Date Deposited: 27 May 2010 14:05
Last Modified: 23 Sep 2013 18:25
URI: http://epubs.surrey.ac.uk/id/eprint/85

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