University of Surrey

Test tubes in the lab Research in the ATI Dance Research

The Effect of Lattice Damage and Annealing Conditions on the Hyperfine Structure of Ion Implanted Bismuth Donors in Silicon

Peach, Tomas, Homewood, Kevin, Lourenco, Manon, Hughes, M, Saeedi, Kaymar, Stavrias, Nikolaos, Li, Juerong, Chick, Steven, Murdin, Benedict and Clowes, Steven (2018) The Effect of Lattice Damage and Annealing Conditions on the Hyperfine Structure of Ion Implanted Bismuth Donors in Silicon Advanced Quantum Technologies, 1 (2), 1800038.

[img] Text
__homes.surrey.ac.uk_home_.System_Desktop_Draft AQT 0 2018.pdf - Accepted version Manuscript
Restricted to Repository staff only until 28 June 2019.

Download (413kB)

Abstract

This study reports on high energy bismuth ion implantation into silicon with a particular emphasis on the effect that annealing conditions have on the observed hyperfine structure of the Si:Bi donor state. A suppression of donor bound exciton, D0X, photoluminescence is observed in implanted samples which have been annealed at 700 °C relating to the presence of a dense layer of lattice defects that is formed during the implantation process. Hall measurments at 10 K show that this implant damage manifests itself at low temperatures as an abundance of p‐type charge carriers, the density of which is observed to have a strong dependence on annealing temperature. Using resonant D0X photoconductivity, we are able to identify the presence of a hyperfine structure in samples annealed at a minimum temperature of 800 °C; however, higher temperatures are required to eliminate effects of implantation strain.

Item Type: Article
Divisions : Faculty of Engineering and Physical Sciences > Physics
Authors :
NameEmailORCID
Peach, Tomast.peach@surrey.ac.uk
Homewood, KevinK.Homewood@surrey.ac.uk
Lourenco, ManonM.Lourenco@surrey.ac.uk
Hughes, M
Saeedi, Kaymar
Stavrias, Nikolaosn.stavrias@surrey.ac.uk
Li, Juerongjuerong.li@surrey.ac.uk
Chick, Stevens.chick@surrey.ac.uk
Murdin, BenedictB.Murdin@surrey.ac.uk
Clowes, StevenS.Clowes@surrey.ac.uk
Date : 28 June 2018
Funders : EPSRC
DOI : 10.1002/qute.201800038
Copyright Disclaimer : This is the peer reviewed version of an article which has been published in final form at https://onlinelibrary.wiley.com/doi/abs/10.1002/qute.201800038. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions.
Uncontrolled Keywords : bismuth, donor bound excitation, hyperfine, implantation, silicon
Depositing User : Melanie Hughes
Date Deposited : 19 Sep 2018 17:31
Last Modified : 11 Dec 2018 11:24
URI: http://epubs.surrey.ac.uk/id/eprint/849366

Actions (login required)

View Item View Item

Downloads

Downloads per month over past year


Information about this web site

© The University of Surrey, Guildford, Surrey, GU2 7XH, United Kingdom.
+44 (0)1483 300800