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Effect of Nanowire-dielectric Interface on the Hysteresis of Solution Processed Silicon Nanowire FETs

Prabha Rajeev, K, Opoku, C, Stolojan, V, Constantinou, M and Shkunov, M (2017) Effect of Nanowire-dielectric Interface on the Hysteresis of Solution Processed Silicon Nanowire FETs Nanoscience and Nanoengineering, 5 (2). pp. 17-24.

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Abstract

Silicon nanowires (Si NW) are ideal candidates for low-cost solution processed field effect transistors (FETs) due to the ability of nanowires to be dispersed in solvents, and demonstrated high charge carrier mobility. The interface between the nanowire and the dielectric plays a crucial role in the FET characteristics, and can be responsible for unwanted effects such as current hysteresis during device operation. Thus, optimal nanowire- dielectric interface is required for low-hysteresis FET performance. Here we show that NW FET hysteresis mostly depends on the nature of the dielectric material by directly comparing device characteristics of dual gate Si NW FETs with bottom SiO2 gate dielectric and top hydrophobic fluoropolymer gate dielectric. As the transistor semiconducting nanowire channel is identical in both tops and bottom operational regimes, the performance differences originate from the nature of the nanowire-dielectric interface. Thus, very high 30 volt hysteresis is observed for forward and reverse gate bias scans with SiO2 interface; however, hysteresis is significantly reduced to 6 volt for the fluoropolymer dielectric interface. The differences in hysteresis are ascribed to the polar OH- groups present at SiO2/Si nanowire interface, and mostly absent at fluoropolymer/Si nanowire interface. We further demonstrate that high density of charge traps for bottom gate SiO2 interface (1× 1013cm-2) is reduced by over an order of magnitude for top-fluoropolymer gate interface (7.5 × 1011 cm-2), therefore highlighting the advantage of hydrophobic polymer gate dielectrics for nanowire field-effect transistor applications.

Item Type: Article
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering
Authors :
NameEmailORCID
Prabha Rajeev, K
Opoku, C
Stolojan, VV.Stolojan@surrey.ac.uk
Constantinou, Mm.constantinou@surrey.ac.uk
Shkunov, MM.Shkunov@surrey.ac.uk
Date : May 2017
DOI : 10.13189/nn.2017.050201
Copyright Disclaimer : Copyright © 2017 by authors, all rights reserved. Authors agree that this article remains permanently open access under the terms of the Creative Commons Attribution License 4.0 International License
Related URLs :
Depositing User : Clive Harris
Date Deposited : 03 Jul 2018 10:51
Last Modified : 07 Nov 2018 12:07
URI: http://epubs.surrey.ac.uk/id/eprint/848632

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