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The Influence of Optical Excitation and Hydrostatic Pressure on the Conductivity of Doped GaAs, InP and (InGa) (AsP).

Wadley, Nicholas James. (1987) The Influence of Optical Excitation and Hydrostatic Pressure on the Conductivity of Doped GaAs, InP and (InGa) (AsP). Doctoral thesis, University of Surrey (United Kingdom)..

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Abstract

Resistivity and photoconductivity measurements have been made, using hydrostatic pressures up to 75 kb on localised states in some III - V semiconductors, including ones with transition metal ions present. The systems investigated were GaAs: Sn, GaAs: Cr: S, n - In[x] G[1-x] As[y] P[1-y], InP: Fe and GaAs: Cr. Many electronic transitions involving localised states (some deep in the band gap) appear to have anomolously high pressure coefficients. Possible explanations are discussed.

Item Type: Thesis (Doctoral)
Divisions : Theses
Authors :
NameEmailORCID
Wadley, Nicholas James.
Date : 1987
Contributors :
ContributionNameEmailORCID
http://www.loc.gov/loc.terms/relators/THS
Additional Information : Thesis (Ph.D.)--University of Surrey (United Kingdom), 1987.
Depositing User : EPrints Services
Date Deposited : 22 Jun 2018 15:17
Last Modified : 06 Nov 2018 16:54
URI: http://epubs.surrey.ac.uk/id/eprint/848534

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