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Rapid thermal annealing of donor implants in gallium arsenide.

Bensalem, Rachid. (1986) Rapid thermal annealing of donor implants in gallium arsenide. Doctoral thesis, University of Surrey (United Kingdom)..

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14 cm-2 dose implanted at anenergy of 300 keV and RT. The electrical activity was found to increase with time and temperature but for sufficiently long times, this activity saturates for a given temperature. Detailed analysis of the data produced: i) an activation energy of 1.2-0.1 eV which is suggested to be that required to remove Sn or Se from a complex defect where it is inactive or compensated and subsequently place it on an appropriate vacancy where it acts as a donor and, ii) activation energies of diffusion of 2.5 +/- 0.1 eV and 4.3 +/- 0.4 eV for Sn and Se implants in GaAs, respectively.

Item Type: Thesis (Doctoral)
Divisions : Theses
Authors :
Bensalem, Rachid.
Date : 1986
Contributors :
Additional Information : Thesis (Ph.D.)--University of Surrey (United Kingdom), 1986.
Depositing User : EPrints Services
Date Deposited : 22 Jun 2018 09:50
Last Modified : 06 Nov 2018 16:52

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