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Modelling of Solution Processed Indium Arsenide Nanowire Microwave Switches

Votsi, Haris, Aaen, Peter, Gillespie, Sean, Mirkhaydarov, Bobur, Shkunov, Maxim and Young, P. R. (2018) Modelling of Solution Processed Indium Arsenide Nanowire Microwave Switches In: International Microwave Symposium 2018 (IMS2018), 10-15 Jun 2018, Pennsylvania Convention Center, Philadelphia, Pennsylvania, USA.

Modelling of Solution Processed Indium Arsenide Nanowire Microwave Switches.pdf - Accepted version Manuscript

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This paper presents the modelling of a coplanarwaveguide bottom-gated FET switch using indium-arsenide nanowires. The nanowires have been included on the switch using dielectrophoresis, which is a solution processable technique. This is a necessary first step towards developing a fully printable switch on a flexible substrate, for low cost microwave devices, built using additive manufacturing methods. The measured S-parameters show the switching capabilities of the device with an insertion loss of 9 dB, when the switch is open (gate voltage ≥ 60 V). The development of a distributed circuit model that matches the measured data is described, alongside the calculated network parameters used to represent the coplanar-waveguide and the nanowires. The model fits the measured results within 8%, making it suitable for inclusion in a CAD based circuit simulator.

Item Type: Conference or Workshop Item (Conference Paper)
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering
Authors :
Date : 15 June 2018
Uncontrolled Keywords : coplanar-waveguide; On-wafer measurements; Nanowires; Microwave switches.
Related URLs :
Depositing User : Clive Harris
Date Deposited : 25 Jan 2018 10:23
Last Modified : 22 Mar 2018 10:07

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