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Non-Quasi-Static Large-Signal Model for RF LDMOS Power Transistors

Zhang, Lei, Aaen, Peter, Kim, Kevin and Rueda, Hernan (2018) Non-Quasi-Static Large-Signal Model for RF LDMOS Power Transistors In: International Microwave Symposium 2018 (IMS2018), 10-15 Jun 2018, Pennsylvania Convention Center, Philadelphia, Pennsylvania, USA.

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Abstract

In this paper, we propose a non-quasi-static large-signal model to capture the high-frequency dispersion exhibited by laterally diffused metal-oxide semiconductor (LDMOS) devices. We show that industry-standard nonlinear large-signal models for LDMOS based on quasi-static assumptions are not sufficient for high-efficiency designs at frequencies higher than 2 GHz. This dispersive behavior results from the combination of high-frequency operation and the lengthened drain extension region that is needed to support high-voltage operation. To improve the model accuracy, higher-order current and charge components, which are directly integrated from bias-dependent S-parameter data, are included in the model. The non-quasi-static large-signal model improves the efficiency and gain predictions by 10% and 0.5 dB at 3.5 GHz. These improvements in accuracy are essential for power amplifier designers to achieve the performance targets necessary for 4G and upcoming 5G designs.

Item Type: Conference or Workshop Item (Conference Paper)
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering
Authors :
NameEmailORCID
Zhang, Leilei.zhang@surrey.ac.uk
Aaen, Peterp.aaen@surrey.ac.uk
Kim, Kevin
Rueda, Hernan
Date : 15 June 2018
Uncontrolled Keywords : Frequency dispersion; LDMOS; Non-quasistatic; Transistor modeling
Related URLs :
Additional Information : Paper ID: 247-KG917
Depositing User : Clive Harris
Date Deposited : 25 Jan 2018 09:34
Last Modified : 22 Mar 2018 10:08
URI: http://epubs.surrey.ac.uk/id/eprint/845690

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