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Non-Quasi-Static Large-Signal Model for RF LDMOS Power Transistors

Zhang, Lei, Aaen, Peter, Kim, Kevin and Rueda, Hernan (2018) Non-Quasi-Static Large-Signal Model for RF LDMOS Power Transistors In: International Microwave Symposium 2018 (IMS2018), 10-15 Jun 2018, Philadelphia, Pennsylvania, USA.

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Abstract

In this paper, we propose a non-quasi-static large-signal model to capture the high-frequency dispersion exhibited by laterally diffused metal-oxide semiconductor (LDMOS) devices. We show that industry-standard nonlinear large-signal models for LDMOS based on quasi-static assumptions are not sufficient for high-efficiency designs at frequencies higher than 2 GHz. This dispersive behavior results from the combination of high-frequency operation and the lengthened drain extension region that is needed to support high-voltage operation. To improve the model accuracy, higher-order current and charge components, which are directly integrated from bias-dependent S-parameter data, are included in the model. The non-quasi-static large-signal model improves the efficiency and gain predictions by 10% and 0.5 dB at 3.5 GHz. These improvements in accuracy are essential for power amplifier designers to achieve the performance targets necessary for 4G and upcoming 5G designs.

Item Type: Conference or Workshop Item (Conference Paper)
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering
Authors :
NameEmailORCID
Zhang, Leilei.zhang@surrey.ac.uk
Aaen, Peterp.aaen@surrey.ac.uk
Kim, Kevin
Rueda, Hernan
Date : 20 August 2018
DOI : 10.1109/MWSYM.2018.8439238
Copyright Disclaimer : © 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Uncontrolled Keywords : Frequency dispersion; LDMOS; Non-quasistatic; Transistor modeling
Related URLs :
Additional Information : Paper ID: 247-KG917
Depositing User : Clive Harris
Date Deposited : 25 Jan 2018 09:34
Last Modified : 13 Dec 2018 12:36
URI: http://epubs.surrey.ac.uk/id/eprint/845690

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