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High-Resolution Thermoreflectance Imaging of GaN Power Microwave Transistors. Invited paper.

Matei, Cristian, Aaen, Peter and Kending, D (2017) High-Resolution Thermoreflectance Imaging of GaN Power Microwave Transistors. Invited paper. In: ARMMS RF & Microwave Society, 13 - 14 November 2017, Wyboston Lakes, Wyboston.

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Abstract

The ever-increasing power density of semiconductors used in monolithic microwave integrated circuits (MMICs) and power amplifiers (PAs) mandates good thermal management and accurate temperature measurements are needed to study device reliability, assess temperature gradients, and to validate nonlinear electrothermal model performance. Thermoreflectance based temperature measurements have been recently applied to high-power microwave semiconductors. The technique determines the temperature by measuring the change in reflectance from a surface due to changing in the index of refraction of the sample. Since the measurement technique uses visible light, thermoreflectance imaging can achieve a spatial resolution of 290 nm and sub-nanosecond temporal resolution over a wide field of view. This makes the method well suited to study the thermal dynamics within these transistors. This presentation will review the capabilities of thermoreflectance measurement, explain the theory behind the thermoreflectance phenomenon, and demonstrate the usefulness of the method and the insights that can be gained by examining several recent measurements.

Item Type: Conference or Workshop Item (Conference Paper)
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering
Authors :
NameEmailORCID
Matei, Cristianc.matei@surrey.ac.uk
Aaen, Peterp.aaen@surrey.ac.uk
Kending, D
Date : 14 October 2017
Funders : EPSRC
Copyright Disclaimer : Copyright 2017 The Author(s)
Uncontrolled Keywords : Thermoreflectance, thermal measurements
Depositing User : Melanie Hughes
Date Deposited : 17 Jan 2018 12:32
Last Modified : 17 Jan 2018 12:35
URI: http://epubs.surrey.ac.uk/id/eprint/845637

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