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Extended Hubbard model for mesoscopic transport in donor arrays in silicon

Le, Nguyen H., Fisher, Andrew J. and Ginossar, Eran (2017) Extended Hubbard model for mesoscopic transport in donor arrays in silicon Physical Review B, 96 (24), 245406. pp. 245406-1.

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Abstract

Arrays of dopants in silicon are promising platforms for the quantum simulation of the Fermi-Hubbard model. We show that the simplest model with only on-site interaction is insufficient to describe the physics of an array of phosphorous donors in silicon due to the strong intersite interaction in the system. We also study the resonant tunneling transport in the array at low temperature as a mean of probing the features of the Hubbard physics, such as the Hubbard bands and the Mott gap. Two mechanisms of localization which suppresses transport in the array are investigated: The first arises from the electron-ion core attraction and is significant at low filling; the second is due to the sharp oscillation in the tunnel coupling caused by the intervalley interference of the donor electron's wave function. This disorder in the tunnel coupling leads to a steep exponential decay of conductance with channel length in one-dimensional arrays, but its effect is less prominent in two-dimensional ones. Hence, it is possible to observe resonant tunneling transport in a relatively large array in two dimensions.

Item Type: Article
Divisions : Faculty of Engineering and Physical Sciences > Physics
Authors :
NameEmailORCID
Le, Nguyen H.
Fisher, Andrew J.
Ginossar, Erane.ginossar@surrey.ac.uk
Date : 11 December 2017
Funders : Engineering and Physical Sciences Research Council (EPSRC)
Identification Number : 10.1103/PhysRevB.96.245406
Copyright Disclaimer : ©2017 American Physical Society
Depositing User : Clive Harris
Date Deposited : 19 Dec 2017 13:43
Last Modified : 14 Mar 2018 16:02
URI: http://epubs.surrey.ac.uk/id/eprint/845446

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