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Strain evaluation in III-V semiconductor compounds from measurement of thickness fringe displacements.

Harvey, Alan John. (1990) Strain evaluation in III-V semiconductor compounds from measurement of thickness fringe displacements. Doctoral thesis, University of Surrey (United Kingdom)..

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Abstract

A technique has been developed for the strain analysis of strained layer heterostructures using a comparison of electron microscope images and simulated images of cleaved wedges. The technique employs the strain relaxation at the edge of the wedge sample, which as the geometry is well known, can be computed using a finite element program. The microscope images of the structure can be taken so that they are independent of the composition and only sensitive to the strain. These images change quite considerably due to a small change in strain and so by comparison between the calculated and experimental images the strain can be measured with an accuracy of about 0.01%.

Item Type: Thesis (Doctoral)
Divisions : Theses
Authors :
NameEmailORCID
Harvey, Alan John.UNSPECIFIEDUNSPECIFIED
Date : 1990
Contributors :
ContributionNameEmailORCID
http://www.loc.gov/loc.terms/relators/THSUNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Depositing User : EPrints Services
Date Deposited : 09 Nov 2017 12:16
Last Modified : 09 Nov 2017 14:44
URI: http://epubs.surrey.ac.uk/id/eprint/843952

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