University of Surrey

Test tubes in the lab Research in the ATI Dance Research

Strain evaluation in III-V semiconductor compounds from measurement of thickness fringe displacements.

Harvey, Alan John. (1990) Strain evaluation in III-V semiconductor compounds from measurement of thickness fringe displacements. Doctoral thesis, University of Surrey (United Kingdom)..

[img]
Preview
Text
10148188.pdf
Available under License Creative Commons Attribution Non-commercial Share Alike.

Download (3MB) | Preview

Abstract

A technique has been developed for the strain analysis of strained layer heterostructures using a comparison of electron microscope images and simulated images of cleaved wedges. The technique employs the strain relaxation at the edge of the wedge sample, which as the geometry is well known, can be computed using a finite element program. The microscope images of the structure can be taken so that they are independent of the composition and only sensitive to the strain. These images change quite considerably due to a small change in strain and so by comparison between the calculated and experimental images the strain can be measured with an accuracy of about 0.01%.

Item Type: Thesis (Doctoral)
Divisions : Theses
Authors :
NameEmailORCID
Harvey, Alan John.
Date : 1990
Contributors :
ContributionNameEmailORCID
http://www.loc.gov/loc.terms/relators/THS
Depositing User : EPrints Services
Date Deposited : 09 Nov 2017 12:16
Last Modified : 20 Jun 2018 11:09
URI: http://epubs.surrey.ac.uk/id/eprint/843952

Actions (login required)

View Item View Item

Downloads

Downloads per month over past year


Information about this web site

© The University of Surrey, Guildford, Surrey, GU2 7XH, United Kingdom.
+44 (0)1483 300800