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Thin film adhesion modification by MeV ions.

Sugden, Stephen. (1991) Thin film adhesion modification by MeV ions. Doctoral thesis, University of Surrey (United Kingdom)..

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Abstract

The adhesion of a thin films, and in paiticular the way in which such adhesion may be improved by irradiation, is a rather poorly understood field of thin film technology. The radiation enhanced adhesion effect has been investigated through the use of Ultra High Vacuum sample preparation, analysis and irradiation techniques, in order to gain control over surface and interface composition. In the systems studied, films deposited on atomically clean surfaces show good adhesion, and no evidence of enhancement due to irradiation is observed in the case of such clean interfaces. The results are entirely consistent with the radiation enhanced adhesion phenomenon being due to radiolytic effects on contaminant containing layers at the film/substrate interface. In addition, on silicon substrates the observations highlight the superiority of thermal cleaning over low energy sputtering as a route for producing a clean surface. A model of the radiation enhanced adhesion observations for dirty interface systems is developed, which takes into account the two dimensional nature of the ion energy deposition process. All the observations on such systems are broadly consistent with an activation energy for the process of approximately 5eV. This value is sufficiently large to bring about chemical bonding rearrangement at the critical film/substrate interface.

Item Type: Thesis (Doctoral)
Divisions : Theses
Authors :
NameEmailORCID
Sugden, Stephen.UNSPECIFIEDUNSPECIFIED
Date : 1991
Contributors :
ContributionNameEmailORCID
http://www.loc.gov/loc.terms/relators/THSUNSPECIFIEDUNSPECIFIEDUNSPECIFIED
Depositing User : EPrints Services
Date Deposited : 09 Nov 2017 12:13
Last Modified : 09 Nov 2017 14:41
URI: http://epubs.surrey.ac.uk/id/eprint/843281

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