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An amorphous titanium dioxide metal insulator metal selector device for ReRAM crossbar arrays with tunable voltage margin

Cortese, S, Carta, Daniela and Khiat, A (2016) An amorphous titanium dioxide metal insulator metal selector device for ReRAM crossbar arrays with tunable voltage margin Applied Physics Letters, 108. 033505-1-033505-4.

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Abstract

Resistive random access memory (ReRAM) crossbar arrays have become one of the most promising candidates for next-generation non volatile memories. To become a mature technology, the sneak path current issue must be solved without compromising all the advantages that crossbars offer in terms of electrical performances and fabrication complexity. Here, we present a highly integrable access device based on nickel and sub-stoichiometric amorphous titanium dioxide (TiO2−x), in a metal insulator metal crossbar structure. The high voltage margin of 3 V, amongst the highest reported for monolayer selector devices, and the good current density of 104 A/cm2 make it suitable to sustain ReRAM read and write operations, effectively tackling sneak currents in crossbars without compromising fabrication complexity in a 1 Selector 1 Resistor (1S1R) architecture. Furthermore, the voltage margin is found to be tunable by an annealing step without affecting the device's characteristics.

Item Type: Article
Divisions : Faculty of Engineering and Physical Sciences > Chemistry
Authors :
NameEmailORCID
Cortese, SUNSPECIFIEDUNSPECIFIED
Carta, Danielad.carta@surrey.ac.ukUNSPECIFIED
Khiat, AUNSPECIFIEDUNSPECIFIED
Date : 20 January 2016
Funders : EPSRC - Engineering and Physical Sciences Research Council
Identification Number : 10.1063/1.4940361
Depositing User : Jane Hindle
Date Deposited : 04 Sep 2017 15:05
Last Modified : 04 Sep 2017 15:05
URI: http://epubs.surrey.ac.uk/id/eprint/842159

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