University of Surrey

Test tubes in the lab Research in the ATI Dance Research

Conductive Atomic Force Microscopy Investigation of Switching Tresholds in Titanium Dioxide Thin Films

Trapatseli, M, Carta, Daniela, Regoutz, A, Khiat, A, Serb, A, Gupta, I and Prodromakis, T (2015) Conductive Atomic Force Microscopy Investigation of Switching Tresholds in Titanium Dioxide Thin Films Journal of Physical Chemistry C, 119 (21). pp. 11958-11964.

Full text not available from this repository.


Titanium dioxide thin films have attracted increasing attention due to their potential in next-generation memory devices. Of particular interest are applications in resistive random access memory (RRAM) devices, where such thin films are used as active layers in metal–insulator–metal (MIM) configurations. When these devices receive a bias above a certain threshold voltage, they exhibit resistive switching (RS), that is, the resistance of the oxide thin film can be tuned between a high resistive state (HRS) and a low resistive state (LRS). In the context of this work, we have used conductive atomic force microscopy (C-AFM) to identify the resistive switching thresholds of titanium dioxide thin films deposited on Si/SiO2/Ti/Pt stacks to be used in memory devices. By performing a set of reading/writing voltage scans over pristine areas of the thin films, we have identified the critical thresholds, which define a reversible operation (soft-breakdown, SB) via localized changes in electrical resistance across the film and an irreversible operation (hard-breakdown, HB) that includes both changes in local electrical resistance and thin film topography. We have also assessed the transition from SB to HB when thin films are stimulated repeatedly with potentials below the identified onsets of HB, validating a history dependent behavior. This study is therefore aimed at presenting new insights in RRAM device programmability, reliability, and eventually failure mechanisms.

Item Type: Article
Divisions : Faculty of Engineering and Physical Sciences > Chemistry
Authors :
Trapatseli, M
Regoutz, A
Khiat, A
Serb, A
Gupta, I
Prodromakis, T
Date : 5 May 2015
DOI : 10.1021/acs.jpcc.5b01672
Copyright Disclaimer : Copyright © 2015 American Chemical Society
Depositing User : Jane Hindle
Date Deposited : 29 Aug 2017 13:07
Last Modified : 24 Aug 2018 08:34

Actions (login required)

View Item View Item


Downloads per month over past year

Information about this web site

© The University of Surrey, Guildford, Surrey, GU2 7XH, United Kingdom.
+44 (0)1483 300800