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Controlling heavy metal and dopant contamination during ion implantation

Wauk, Michael T., Castle, Matt, England, Jonathan and Current, Michael (1994) Controlling heavy metal and dopant contamination during ion implantation Microcontamination, 12 (10). pp. 29-37.

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Abstract

The energetic processes used in ion implantation give rise to many mechanisms that can result in the contamination of implanted surfaces by metallic and dopant atoms. This article discusses methods used to identify the sources of such contamination, and gives examples of ways to minimize or eliminate the transfer of contaminant atoms to implanted wafers during high-current ion implantation.

Item Type: Article
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering
Authors :
NameEmailORCID
Wauk, Michael T.UNSPECIFIEDUNSPECIFIED
Castle, MattUNSPECIFIEDUNSPECIFIED
England, Jonathanj.england@surrey.ac.ukUNSPECIFIED
Current, MichaelUNSPECIFIEDUNSPECIFIED
Date : October 1994
Copyright Disclaimer : © 1983 Canon Communications
Related URLs :
Depositing User : Clive Harris
Date Deposited : 14 Jun 2017 08:00
Last Modified : 14 Jun 2017 08:00
URI: http://epubs.surrey.ac.uk/id/eprint/841376

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