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Factors affecting the design of the Applied Materials xR80 implant family

Lowrie, C., England, Jonathan, Hunter, A., Burgin, D. and Harrison, B. (1997) Factors affecting the design of the Applied Materials xR80 implant family In: 11th International Conference on Ion Implantation Technology, 16-21 Jun 1996, Austin, Texas, USA.

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This paper describes the assumptions made and solutions adopted by the xR80 design team in an attempt to optimise the overall cost performance ratio of the system, by design. The beamline design will be described in detail, together with the factors which increase low energy beam current transmission. New ion source and extraction technology have been key in producing high beam currents, concurrent with low maintenance intervals. To minimise the system footprint, several creative approaches have been taken in design of the beamline and also the handling system, particularly since the dimensional characteristics are to be maintained in the transition to 300 mm wafer size. These factors, together with the solutions adopted to maintain system maintainability will be described in detail in the paper.

Item Type: Conference or Workshop Item (Conference Paper)
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering
Authors :
Lowrie, C.
Hunter, A.
Burgin, D.
Harrison, B.
Date : 1997
DOI : 10.1109/IIT.1996.586394
Copyright Disclaimer : © 1997 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works
Uncontrolled Keywords : Implants; Costs; Doping; Ion sources; Manufacturing processes; Optical beams; Ion beams; Throughput; Foundries; Design optimization
Depositing User : Clive Harris
Date Deposited : 13 Jun 2017 15:07
Last Modified : 16 Jan 2019 18:53

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