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Range and damage distributions in ultra-low energy boron implantation into silicon

Hatzopoulos, N., Suder, S., van den Berg, J.A., Donnelly, S.E., Cook, C.E.A., Armour, D.G., Panknin, D., Fukarek, W., Lucassen, M., Frey, L., Foad, M.A., England, Jonathan, Moffatt, S., Bailey, P., Noakes, C.T. and Ohno, H. (1997) Range and damage distributions in ultra-low energy boron implantation into silicon In: 11th International Conference on Ion Implantation Technology, 16-21 Jun 1996, Austin, Texas, USA.

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Abstract

An ultra high vacuum, low energy ion implanter was used in conjunction with a range of analytical techniques to study the range and damage distributions of B/sup +/ ions implanted at normal incidence into Si(100) samples held at room temperature. Samples were implanted over a dose range from 1E14 ions/cm/sup 2/ with and without a surface oxide layer and those implanted at 1 keV and below were capped with a nominal 20 nm layer of /sup 28/Si by ion beam deposition in situ in order to produce an oxygen equilibration layer for subsequent secondary ion mass spectrometry depth profiling. The samples were analysed using secondary ion mass spectroscopy, medium energy ion scattering, spectroscopic ellipsometry, spreading resistance profiling and high resolution, cross section transmission electron microscopy to obtain the range and damage distributions and junction depths. The general observations were that channelling occurs at all energies studied, and that the relationship between the damage and range distributions depends strongly on bombardment energy. Comparison of the range and damage profiles was carried out to ascertain the role of the surface in determining the behaviour of defects produced very close to it by the low energy implants required for the production of junctions at depths in the 20 to 50 nm range. The role of the surface or silicon/silicon dioxide interface as a defect sink significantly influences the B redistribution behaviour during rapid thermal annealing.

Item Type: Conference or Workshop Item (Conference Paper)
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering
Authors :
NameEmailORCID
Hatzopoulos, N.UNSPECIFIEDUNSPECIFIED
Suder, S.UNSPECIFIEDUNSPECIFIED
van den Berg, J.A.UNSPECIFIEDUNSPECIFIED
Donnelly, S.E.UNSPECIFIEDUNSPECIFIED
Cook, C.E.A.UNSPECIFIEDUNSPECIFIED
Armour, D.G.UNSPECIFIEDUNSPECIFIED
Panknin, D.UNSPECIFIEDUNSPECIFIED
Fukarek, W.UNSPECIFIEDUNSPECIFIED
Lucassen, M.UNSPECIFIEDUNSPECIFIED
Frey, L.UNSPECIFIEDUNSPECIFIED
Foad, M.A.UNSPECIFIEDUNSPECIFIED
England, Jonathanj.england@surrey.ac.ukUNSPECIFIED
Moffatt, S.UNSPECIFIEDUNSPECIFIED
Bailey, P.UNSPECIFIEDUNSPECIFIED
Noakes, C.T.UNSPECIFIEDUNSPECIFIED
Ohno, H.UNSPECIFIEDUNSPECIFIED
Date : 1997
Identification Number : https://doi.org/10.1109/IIT.1996.586431
Copyright Disclaimer : © 1997 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.
Uncontrolled Keywords : Boron; Mass spectroscopy; Elementary particle vacuum; Vacuum technology; Temperature distribution; Ion beams; Scattering; Ellipsometry; Energy resolution; Electrons
Depositing User : Clive Harris
Date Deposited : 13 Jun 2017 14:57
Last Modified : 13 Jun 2017 14:57
URI: http://epubs.surrey.ac.uk/id/eprint/841370

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