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The Applied Materials xRLEAP ion implanter for ultra shallow junction formation

England, Jonathan, Joyce, L., Burgess, C., Moffatt, S., Foad, M., Armour, D. and Current, M. (1997) The Applied Materials xRLEAP ion implanter for ultra shallow junction formation In: 11th International Conference on Ion Implantation Technology, 16-21 Jun 1996, Austin, Texas, USA.

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As semiconductor device design rule dimensions continue to shrink, there is a demand for transistor junction depths to decrease. New processes are required that involve lower energy implants but the reduced beam currents available due to space charge limits in beam generation and transport at these lower energies can limit productivity to such a level that other non-implant technologies become attractive. The Applied Materials xR80 implanter uses state of the art beam generation and extraction optics coupled to an open geometry, short beamline to produce enhanced performance to energies down to 2 keV. The xRLEAP significantly increases beam currents at these energies and further reduces the energies at which product worthy beam currents can be obtained by the use of high transmission energy retardation optics added to the xR80 system. The milliampere beam currents achieved down to energies of a few hundred electron volts will extend the capability of ion implantation to manufacture product worthy shallow junction devices.

Item Type: Conference or Workshop Item (Conference Paper)
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering
Authors :
Joyce, L.
Burgess, C.
Moffatt, S.
Foad, M.
Armour, D.
Current, M.
Date : 1997
DOI : 10.1109/IIT.1996.586402
Copyright Disclaimer : © 1997 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works
Uncontrolled Keywords : Semiconductor materials; Semiconductor devices; Transistors; Implants; Space charge; Productivity; Space technology; Optical materials; Optical coupling; Geometrical optics
Depositing User : Clive Harris
Date Deposited : 13 Jun 2017 14:07
Last Modified : 16 Jan 2019 18:53

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