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200 eV–10 keV boron implantation and rapid thermal annealing: Secondary ion mass spectroscopy and transmission electron microscopy study

Current, M. I., Lopes, D., Foad, M.A., England, Jonathan, Jones, C. and Su, D. (1998) 200 eV–10 keV boron implantation and rapid thermal annealing: Secondary ion mass spectroscopy and transmission electron microscopy study Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 16 (1). pp. 327-333.

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Abstract

Atomic profiles (secondary ion mass spectroscopy) and cross-section transmission electron microscopy (TEM) images of selectively etched, annealed profiles were studied for boron energies from 200 eV to 10 keV and rapid thermal processing anneals at 900, 975, and 1050 °C. Consistent variations of dopant depth were obtained over this process range. TEM images showed evidence of lateral dopant variation near the edges of poly-Si gate structures, perhaps an effect of lateral straggling and reflection of ions from the polymask.

Item Type: Article
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering
Authors :
NameEmailORCID
Current, M. I.UNSPECIFIEDUNSPECIFIED
Lopes, D.UNSPECIFIEDUNSPECIFIED
Foad, M.A.UNSPECIFIEDUNSPECIFIED
England, Jonathanj.england@surrey.ac.ukUNSPECIFIED
Jones, C.UNSPECIFIEDUNSPECIFIED
Su, D.UNSPECIFIEDUNSPECIFIED
Date : January 1998
Identification Number : 10.1116/1.589805
Copyright Disclaimer : © 1998 American Vacuum Society. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in M. I. Current, D. Lopes, M. A. Foad, J. G. England, C. Jones, and D. Su, J. Vac. Sci. Technol. B 16, 327 (1998). and may be found at http://dx.doi.org/10.1116/1.589805
Depositing User : Clive Harris
Date Deposited : 13 Jun 2017 13:39
Last Modified : 13 Jun 2017 13:39
URI: http://epubs.surrey.ac.uk/id/eprint/841367

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