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Analysis of sub-1keV Implants in Silicon using SIMS, SRP, MEISS and DLTS: The xRLEAP Low Energy, High Current Implanter Evaluated

Foad, M.A., England, Jonathan, Moffatt, S. and Armour, D.G. (1997) Analysis of sub-1keV Implants in Silicon using SIMS, SRP, MEISS and DLTS: The xRLEAP Low Energy, High Current Implanter Evaluated In: 11th International Conference on Ion Implantation Technology, 16-21 Jun 1996, Austin, Texas, USA.

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Abstract

Ultra shallow junctions can be formed, amongst other techniques, by very low energy ion implantation. The Implant Division of Applied Materials have recently developed a low energy, high current ion implanter, the xRLEAP (xR family, Low Energy Advance Process). This implanter is capable of delivering product worthy beam currents, in the milli-ampere regime down to energies of few hundred electron volts. A series of B and BF/sub 2/ implants were carried out onto non-amorphised, 200 mm Si wafers using beam energies in the range 0.2 keV

Item Type: Conference or Workshop Item (Conference Paper)
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering
Authors :
NameEmailORCID
Foad, M.A.UNSPECIFIEDUNSPECIFIED
England, Jonathanj.england@surrey.ac.ukUNSPECIFIED
Moffatt, S.UNSPECIFIEDUNSPECIFIED
Armour, D.G.UNSPECIFIEDUNSPECIFIED
Date : 1997
Identification Number : https://doi.org/10.1109/IIT.1996.586471
Copyright Disclaimer : © 1997 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works
Uncontrolled Keywords : Implants; Silicon; Annealing; Ion implantation; Boron; Current density; Spectroscopy; Electronics industry; Ion beams; Voltage
Depositing User : Clive Harris
Date Deposited : 13 Jun 2017 14:35
Last Modified : 13 Jun 2017 14:35
URI: http://epubs.surrey.ac.uk/id/eprint/841361

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