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The Effect of Amorphization Conditions on the Measured Activation of Source Drain Extension Implants

England, Jonathan, Kontos, Alexander, Renau, Anthony, Gwilliam, Russell, Smith, Andrew, Knights, Andrew, Jain, Amitabh, Seebauer, Edmund G., Felch, Susan B., Jain, Amitabh and Kondratenko, Yevgeniy V. (2008) The Effect of Amorphization Conditions on the Measured Activation of Source Drain Extension Implants In: Ion Implantation Technology 2008: 17th International Conference on Ion Implantation Technology, 8–13 Jun 2008, Monterey, USA.

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Abstract

Un‐patterned wafers were processed using low‐dose Indium or medium‐dose Germanium pre‐amorphization implants (PAI) followed by p‐type dopant implants of BF 2 or carborane (CBH). The wafers were then annealed by RTA (spike), laser anneal (LSA) or combination of LSA and spike. Active dopant distributions calculated from SIMS and sheet resistance measurements compared favorably with those determined by differential Hall, which is a challenging technique for shallow profiles. The trends in B diffusion behavior and activation are discussed in relation to the different implant damage budgets, damage evolution during the anneals and presence of fluorine. In particular, for low thermal budget LSA only anneals, CBH implants appear to give higher activation than BF 2 due to the absence of fluorine.

Item Type: Conference or Workshop Item (Conference Paper)
Authors :
NameEmailORCID
England, Jonathanj.england@surrey.ac.ukUNSPECIFIED
Kontos, AlexanderUNSPECIFIEDUNSPECIFIED
Renau, AnthonyUNSPECIFIEDUNSPECIFIED
Gwilliam, RussellUNSPECIFIEDUNSPECIFIED
Smith, AndrewUNSPECIFIEDUNSPECIFIED
Knights, AndrewUNSPECIFIEDUNSPECIFIED
Jain, AmitabhUNSPECIFIEDUNSPECIFIED
Seebauer, Edmund G.UNSPECIFIEDUNSPECIFIED
Felch, Susan B.UNSPECIFIEDUNSPECIFIED
Jain, AmitabhUNSPECIFIEDUNSPECIFIED
Kondratenko, Yevgeniy V.UNSPECIFIEDUNSPECIFIED
Date : 3 November 2008
Identification Number : https://doi.org/10.1063/1.3033691
Copyright Disclaimer : © 2008 American Institute of Physics. This is the published version of the following article: 'The Effect of Amorphization Conditions on the Measured Activation of Source Drain Extension Implants', J. England et al., AIP Conference Proceedings 2008 1066:1, 91-94, which has been published at http://dx.doi.org/10.1063/1.3033691.
Uncontrolled Keywords : Pre-amorphization; Ion implantation; Transient enhanced diffusion; Activation; Laser annealing
Depositing User : Clive Harris
Date Deposited : 09 Jun 2017 12:58
Last Modified : 09 Jun 2017 12:58
URI: http://epubs.surrey.ac.uk/id/eprint/841346

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