Zhang, Wei and Snaith, Henry
(2014)
Effect of anion on metal-organic halide perovskite film formation and the performance of plannar heterojunction device
In: International Conference Solution Processed Semiconductor Solar Cells (SSSC14), 10-12 Sep 2014, Oxford, UK.
Full text not available from this repository.
Abstract
Perovskite solar cells, which represent the promise of future generation photovoltaic technology
with the lowest cost and highest efficiency, have evoked widespread scientific and industrial interest.
Through rational device architecture design, materials interface engineering as well as processing
technique optimization, a recorded efficiency around 18% has been attained, showing great potential
for commercialization to compete with traditional silicon solar cells. Although the device performance of
perovskite solar cells improves unprecedently fast in last two years, the basic properties of metalorganic
halide perovskite, MAPbX3 (X=Cl, Br, I), such as the role of cation and anion, for example, are
still not well understood. Most of research focuses on the perovskite band gap tuning by changing the
ratio of either anions (Br to I) or cations (FA to MA). However, up to date, the effect of anion in
percursor solution on the perovskite crystal growth and film formation has not been well studied yet,
which is highly likely to correlate with the device performance. In addition, there is a long debate on the
existence and role of Cl in mixed-halide perovskite and the results from varied groups employing
different characterization techniques are quite controversial. Fully understanding of these questions is
critically important for the advancement of perovskite solar cell technology in the next few years. In this
work, the effect of anion was systematically studied and we found that anion in precursor solution has
great influence on the perovskite crystal growth and film formation. By materials engineering, both film
morphology and processing time are greatly improved, which leads to enhanced performance in plannar
heterojunction devices.
Actions (login required)
 |
View Item |
Downloads per month over past year