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Method of doping a polycrystalline transistor channel for vertical NAND devices

Waite, et al. (2015) Method of doping a polycrystalline transistor channel for vertical NAND devices 9,018,064.

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Abstract

A method of doping the polycrystalline channel in a vertical FLASH device is disclosed. This method uses a plurality of high energy ion implants to dope the channel at various depths of the channel. In some embodiments, these ion implants are performed at an angle offset from the normal direction, such that the implanted ions pass through at least a portion of the surrounding ONO stack. By passing through the ONO stack, the distribution of ranges reached by each ion may differ from that created by a vertical implant.

Item Type: Patent
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering
Authors :
NameEmailORCID
Waite, Andrew M.UNSPECIFIEDUNSPECIFIED
England, Jonathanj.england@surrey.ac.ukUNSPECIFIED
Prasad, RajeshUNSPECIFIEDUNSPECIFIED
Date : 28 April 2015
Identification Number : 9,018,064
Depositing User : Clive Harris
Date Deposited : 26 May 2017 12:49
Last Modified : 26 May 2017 12:49
URI: http://epubs.surrey.ac.uk/id/eprint/841206

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