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Method of implanting high aspect ratio features

England, et al. (2014) Method of implanting high aspect ratio features 8,846,508.

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Abstract Methods to implant ions into the sidewall of a three dimensional high aspect ratio feature, such as a trench or via, are disclosed. The methods utilize a phenomenon known as knock-in, which causes a first species of ions, already disposed in the fill material, to become implanted in the sidewall when these ions are struck by ions of a second species being implanted into the fill material. In some embodiments, these first species and second species have similar masses to facilitate knock-in. In some embodiments, the entire hole is not completely filled with fill material. Rather, some fill material is deposited, an ion implant is performed to cause knock-in to the sidewall adjacent to the deposited fill material, and the process is repeated until the hole is filled.

Item Type: Patent
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering
Authors :
Waite, Andrew M.
Ruffell, Simon
Date : 30 September 2014
DOI : 8,846,508
Depositing User : Clive Harris
Date Deposited : 26 May 2017 12:38
Last Modified : 16 Jan 2019 18:52

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