University of Surrey

Test tubes in the lab Research in the ATI Dance Research

Techniques for temperature-controlled ion implantation

England, et al. (2013) Techniques for temperature-controlled ion implantation 8,450,193.

Full text not available from this repository.

Abstract

Techniques for temperature-controlled ion implantation are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for temperature-controlled ion implantation. The apparatus may comprise a platen to hold a wafer in a single-wafer process chamber during ion implantation, the platen including: a wafer clamping mechanism to secure the wafer onto the platen and to provide a predetermined thermal contact between the wafer and the platen, and one or more heating elements to pre-heat and maintain the platen in a predetermined temperature range above room temperature. The apparatus may also comprise a post-cooling station to cool down the wafer after ion implantation. The apparatus may further comprise a wafer handling assembly to load the wafer onto the pre-heated platen and to remove the wafer from the platen to the post-cooling station.

Item Type: Patent
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering
Authors :
NameEmailORCID
England, Jonathanj.england@surrey.ac.ukUNSPECIFIED
Muka, Richard StephenUNSPECIFIEDUNSPECIFIED
Arevalo, Edwin A.UNSPECIFIEDUNSPECIFIED
Fang, ZiweiUNSPECIFIEDUNSPECIFIED
Singh, VikramUNSPECIFIEDUNSPECIFIED
Date : 28 May 2013
Identification Number : 8,450,193
Depositing User : Clive Harris
Date Deposited : 26 May 2017 12:34
Last Modified : 26 May 2017 12:34
URI: http://epubs.surrey.ac.uk/id/eprint/841203

Actions (login required)

View Item View Item

Downloads

Downloads per month over past year


Information about this web site

© The University of Surrey, Guildford, Surrey, GU2 7XH, United Kingdom.
+44 (0)1483 300800