University of Surrey

Test tubes in the lab Research in the ATI Dance Research

Technique for low-temperature ion implantation

England, et al. (2012) Technique for low-temperature ion implantation 8,319,196.

Full text not available from this repository.


A technique for low-temperature ion implantation is disclosed. In one particular exemplary embodiment, the technique may be realized as an apparatus for low-temperature ion implantation. The apparatus may comprise a pre-chill station located in proximity to an end station in an ion implanter; a cooling mechanism within the pre-chill station configured to cool a wafer from ambient temperature to a predetermined range less than ambient temperature; a loading assembly coupled to the pre-chill station and the end station; and a controller in communication with the loading assembly and the cooling mechanism to coordinate loading a wafer into the pre-chill station, cooling the wafer down to the predetermined temperature range before any ion implantation into the wafer, and loading the cooled wafer into the end station where the cooled wafer undergoes an ion implantation process.

Item Type: Patent
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering
Authors :
Walther, Steven R.
Muk, Richard S.
Blake, Julian G.
Murphy, Paul J.
Liebert, Reuel B.
Date : 27 November 2012
DOI : 8,319,196
Depositing User : Clive Harris
Date Deposited : 26 May 2017 12:29
Last Modified : 06 Jul 2019 05:23

Actions (login required)

View Item View Item


Downloads per month over past year

Information about this web site

© The University of Surrey, Guildford, Surrey, GU2 7XH, United Kingdom.
+44 (0)1483 300800