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Technique for low-temperature ion implantation

England, et al. (2012) Technique for low-temperature ion implantation 8,319,196.

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Abstract

A technique for low-temperature ion implantation is disclosed. In one particular exemplary embodiment, the technique may be realized as an apparatus for low-temperature ion implantation. The apparatus may comprise a pre-chill station located in proximity to an end station in an ion implanter; a cooling mechanism within the pre-chill station configured to cool a wafer from ambient temperature to a predetermined range less than ambient temperature; a loading assembly coupled to the pre-chill station and the end station; and a controller in communication with the loading assembly and the cooling mechanism to coordinate loading a wafer into the pre-chill station, cooling the wafer down to the predetermined temperature range before any ion implantation into the wafer, and loading the cooled wafer into the end station where the cooled wafer undergoes an ion implantation process.

Item Type: Patent
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering
Authors :
NameEmailORCID
England, Jonathanj.england@surrey.ac.ukUNSPECIFIED
Walther, Steven R.UNSPECIFIEDUNSPECIFIED
Muk, Richard S.UNSPECIFIEDUNSPECIFIED
Blake, Julian G.UNSPECIFIEDUNSPECIFIED
Murphy, Paul J.UNSPECIFIEDUNSPECIFIED
Liebert, Reuel B.UNSPECIFIEDUNSPECIFIED
Date : 27 November 2012
Identification Number : 8,319,196
Depositing User : Clive Harris
Date Deposited : 26 May 2017 12:29
Last Modified : 26 May 2017 12:29
URI: http://epubs.surrey.ac.uk/id/eprint/841202

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