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Techniques for temperature controlled ion implantation

Blake, et al. (2011) Techniques for temperature controlled ion implantation 7,993,698.

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Abstract

Techniques for temperature-controlled ion implantation are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for temperature-controlled ion implantation. The apparatus may comprise at least one thermal sensor adapted to measure a temperature of a wafer during an ion implantation process inside an end station of an ion implanter. The apparatus may also comprise a thermal conditioning unit coupled to the end station. The apparatus may further comprise a controller in communication with the thermal sensor and the thermal conditioning unit, wherein the controller compares the measured temperature to a desired wafer temperature and causes the thermal conditioning unit to adjust the temperature of the wafer based upon the comparison.

Item Type: Patent
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering
Authors :
NameEmailORCID
Blake, JulianUNSPECIFIEDUNSPECIFIED
England, Jonathanj.england@surrey.ac.ukUNSPECIFIED
Holden, ScottUNSPECIFIEDUNSPECIFIED
Walther, Steven R.UNSPECIFIEDUNSPECIFIED
Liebert, ReuelUNSPECIFIEDUNSPECIFIED
Muka, Richard S.UNSPECIFIEDUNSPECIFIED
Jeong, UkyoUNSPECIFIEDUNSPECIFIED
Liu, JinningUNSPECIFIEDUNSPECIFIED
Shim, Kyu-HaUNSPECIFIEDUNSPECIFIED
Mehta, SandeepUNSPECIFIEDUNSPECIFIED
Date : 9 August 2011
Identification Number : 7,993,698
Depositing User : Clive Harris
Date Deposited : 26 May 2017 12:12
Last Modified : 26 May 2017 12:12
URI: http://epubs.surrey.ac.uk/id/eprint/841199

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