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Technique for low-temperature ion implantation

England, et al. (2011) Technique for low-temperature ion implantation 7,935,942.

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A technique for low-temperature ion implantation is disclosed. In one particular exemplary embodiment, the technique may be realized as an apparatus for low-temperature ion implantation. The apparatus may comprise a pre-chill station located in proximity to an end station in an ion implanter. The apparatus may also comprise a cooling mechanism within the pre-chill station. The apparatus may further comprise a loading assembly coupled to the pre-chill station and the end station. The apparatus may additionally comprise a controller in communication with the loading assembly and the cooling mechanism to coordinate loading a wafer into the pre-chill station, cooling the wafer down to a predetermined temperature range, and loading the cooled wafer into the end station where the cooled wafer undergoes an ion implantation process.

Item Type: Patent
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering
Authors :
Walther, Steven R.
Muka, Richard S.
Blake, Julian
Murphy, Paul J.
Liebert, Reuel B.
Date : 3 May 2011
DOI : 7,935,942
Depositing User : Clive Harris
Date Deposited : 26 May 2017 12:04
Last Modified : 06 Jul 2019 05:23

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