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Techniques for forming shallow junctions

Arevalo, et al. (2010) Techniques for forming shallow junctions 7,642,150.

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Techniques for forming shallow junctions are disclosed. In one particular exemplary embodiment, the techniques may be realized as a method for forming shallow junctions. The method may comprise generating an ion beam comprising molecular ions based on one or more materials selected from a group consisting of: digermane (Ge.sub.2H.sub.6), germanium nitride (Ge.sub.3N.sub.4), germanium-fluorine compounds (GF.sub.n, wherein n=1, 2, or 3), and other germanium-containing compounds. The method may also comprise causing the ion beam to impact a semiconductor wafer.

Item Type: Patent
Divisions : Faculty of Engineering and Physical Sciences
Authors :
Arevalo, Edwin A.
Hatem, Christopher R.
Renau, Anthony
Date : 5 January 2010
DOI : 7,642,150
Depositing User : Clive Harris
Date Deposited : 26 May 2017 11:42
Last Modified : 16 Jan 2019 18:52

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