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Ion implantation device with a dual pumping mode and method thereof

England, et al. (2009) Ion implantation device with a dual pumping mode and method thereof 7,622,722.

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Abstract

An ion implantation device with a dual pumping mode and method thereof for use in producing atomic or molecular ion beams are disclosed. In one particular exemplary embodiment, an ion implantation apparatus is provided for controlling a pressure within an ion beam source housing corresponding to an ion beam species being produced. The ion implantation apparatus may include the ion beam source housing comprising a plurality of species for use in ion beam production. A pumping section may also be included for evacuating gas from the ion beam source housing. A controller may further be included for controlling the pumping section according to pumping parameters corresponding to a species of the plurality of species being used for ion beam production.

Item Type: Patent
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering
Authors :
NameEmailORCID
England, Jonathanj.england@surrey.ac.ukUNSPECIFIED
Hatem, Christopher R.UNSPECIFIEDUNSPECIFIED
Scheuer, Jay ThomasUNSPECIFIEDUNSPECIFIED
Olson, Joseph C.UNSPECIFIEDUNSPECIFIED
Date : 24 November 2009
Identification Number : 7,622,722
Depositing User : Clive Harris
Date Deposited : 26 May 2017 11:37
Last Modified : 26 May 2017 11:37
URI: http://epubs.surrey.ac.uk/id/eprint/841192

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