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Technique for improving ion implantation based on ion beam angle-related information

Gupta, et al. (2009) Technique for improving ion implantation based on ion beam angle-related information 7,561,983.

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Abstract

A technique for improving ion implantation based on ion beam angle-related information is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for improving ion implantation. The method may comprise obtaining angle-related information associated with an ion beam. The method may also comprise calculating, based on the angle-related information, an ion beam angle distribution over a wafer for one or more potential scanning modes. The method may further comprise selecting a desired scanning mode from the one or more potential scanning modes based on an evaluation of performance metric caused by the ion beam angle distribution.

Item Type: Patent
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering
Authors :
NameEmailORCID
Gupta, AtulUNSPECIFIEDUNSPECIFIED
England, Jonathanj.england@surrey.ac.ukUNSPECIFIED
Date : 14 July 2009
Identification Number : 7,561,983
Depositing User : Clive Harris
Date Deposited : 26 May 2017 11:33
Last Modified : 26 May 2017 11:33
URI: http://epubs.surrey.ac.uk/id/eprint/841191

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