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Ion implantation apparatus and a method of monitoring high energy neutral contamination in an ion implantation process

Adibi, et al. (1999) Ion implantation apparatus and a method of monitoring high energy neutral contamination in an ion implantation process 5883391.

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Abstract

High energy neutral contamination in an ion implanter can be caused by beam ions neutralised as they are temporarily accelerated at an electrode before being decelerated again to the desired implant energy. This occurs for example in the decel lens arrangement which includes an electrode at a relatively high negative potential to provide the required focusing. The level of this contamination is monitored by measuring the current drain on this negative field electrode.

Item Type: Patent
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering
Authors :
NameEmailORCID
Adibi, BabakUNSPECIFIEDUNSPECIFIED
England, Jonathanj.england@surrey.ac.ukUNSPECIFIED
Moffatt, StephenUNSPECIFIEDUNSPECIFIED
Marin, Jose AntonioUNSPECIFIEDUNSPECIFIED
Date : 16 March 1999
Identification Number : 5883391
Depositing User : Clive Harris
Date Deposited : 25 May 2017 14:55
Last Modified : 25 May 2017 14:55
URI: http://epubs.surrey.ac.uk/id/eprint/841173

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