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Plasma flood system for the reduction of charging of wafers during ion implantation

Ito, et al. (1995) Plasma flood system for the reduction of charging of wafers during ion implantation 5,399,871.

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Abstract

A plasma flood system for use in the implantation of ions in a semiconductor substrate comprising a plasma and low energy electron source for developing a plasma containing low energy electrons for magnetic field enhanced transmission to a negatively biased, magnetic field assisted electron confinement tube and into an ion beam flowing axially through the tube to the semiconductor substrate for self regulating and neutralizing positive charges on the surface of the substrate without causing significant negative charging of the substrate.

Item Type: Patent
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering
Authors :
NameEmailORCID
Ito, HiroyukiUNSPECIFIEDUNSPECIFIED
England, Jonathanj.england@surrey.ac.ukUNSPECIFIED
Plumb, FrederickUNSPECIFIEDUNSPECIFIED
Fotheringham, IanUNSPECIFIEDUNSPECIFIED
Date : 21 March 1995
Identification Number : 5,399,871
Depositing User : Clive Harris
Date Deposited : 25 May 2017 13:40
Last Modified : 25 May 2017 13:40
URI: http://epubs.surrey.ac.uk/id/eprint/841165

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