Application of ion-implantation for improved non-volatile resistive random access memory (ReRAM)

Elliman, R, Saleh, M, Kim, T-H, Venkatachalam, D, Belay, K, Ruffell, S, Kurunczi, P and England, JG (2013) Application of ion-implantation for improved non-volatile resistive random access memory (ReRAM) Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 307. pp. 98-101.

Full text not available from this repository.

Abstract

Resistive switching in transition metal oxides is believed to be controlled by the migration of oxygen vacancies and many interesting device structures employ substoichiometric oxide layers as a source of these active defects. However, the growth of thin (∼10 nm) oxide/suboxide heterostructures (e.g. HfO2/HfOx or Ta2O5/TaOx) is difficult using conventional film deposition techniques. In this study, ion-implantation is shown to provide an alternative means of synthesizing such structures, with results reported for Ta2O5/TaOx heterostructures fabricated by oxygen-implantation of Ta. The electrical properties of the fabricated heterostructures are discussed with reference to the physical structure of the samples determined from transmission electron microscopy and X-ray photoelectron spectroscopy.

Item Type:	Article
Subjects :	Electronic Engineering
Divisions :	Surrey research (other units)
Authors :	Name Email ORCID Elliman, R Saleh, M Kim, T-H Venkatachalam, D Belay, K Ruffell, S Kurunczi, P England, JG j.england@surrey.ac.uk
Date :	15 July 2013
DOI :	10.1016/j.nimb.2012.11.094
Copyright Disclaimer :	2013 Elsevier B.V. All rights reserved.
Uncontrolled Keywords :	Ion-implantation, Resistive switching, Non-volatile memory, Tantalum oxide
Depositing User :	Symplectic Elements
Date Deposited :	17 May 2017 13:58
Last Modified :	25 Jan 2020 00:36
URI:	http://epubs.surrey.ac.uk/id/eprint/841046

Actions (login required)

View Item

Downloads