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Formation and characterization of Ta2O5/TaOx films formed by O ion implantation

Ruffell, S, Kurunczi, P, England, JG, Erokhin, Y, Hautala, J and Elliman, R (2013) Formation and characterization of Ta2O5/TaOx films formed by O ion implantation Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 307. pp. 491-494.

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Abstract

Ta2O5/TaOx (oxide/suboxide) heterostructures are fabricated by high fluence O ion-implantation into deposited Ta films. The resultant films are characterized by depth profiling X-ray photoelectron spectroscopy (XPS), cross-sectional transmission electron microscopy (XTEM), four-point probe, and current–voltage and capacitance–voltage measurements. The measurements show that Ta2O5/TaOx oxide/suboxide heterostructures can be fabricated with the relative thicknesses of the layers controlled by implantation energy and fluence. Electrical measurements show that this approach has promise for high volume manufacturing of resistive switching memory devices based on oxide/suboxide heterostructures.

Item Type: Article
Subjects : Electronic Engineering
Authors :
NameEmailORCID
Ruffell, SUNSPECIFIEDUNSPECIFIED
Kurunczi, PUNSPECIFIEDUNSPECIFIED
England, JGj.england@surrey.ac.ukUNSPECIFIED
Erokhin, YUNSPECIFIEDUNSPECIFIED
Hautala, JUNSPECIFIEDUNSPECIFIED
Elliman, RUNSPECIFIEDUNSPECIFIED
Date : 15 July 2013
Identification Number : https://doi.org/10.1016/j.nimb.2012.11.092
Copyright Disclaimer : 2013 Elsevier B.V. All rights reserved.
Uncontrolled Keywords : Ion-implantation, Resistive switching, Nonvolatile memory, Tantalum oxide
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 13:58
Last Modified : 18 May 2017 12:54
URI: http://epubs.surrey.ac.uk/id/eprint/841045

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