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Room Temperature Grown High-Quality Polymer-Like Carbon Gate Dielectric for Organic Thin-Film Transistors

Feng, L, Anguita, JV, Tang, W, Zhao, J, Guo, X and Silva, SRP (2016) Room Temperature Grown High-Quality Polymer-Like Carbon Gate Dielectric for Organic Thin-Film Transistors ADVANCED ELECTRONIC MATERIALS, 2 (3), ARTN 15003.

Full text not available from this repository.
Item Type: Article
Authors :
NameEmailORCID
Feng, LUNSPECIFIEDUNSPECIFIED
Anguita, JVj.anguita@surrey.ac.ukUNSPECIFIED
Tang, WUNSPECIFIEDUNSPECIFIED
Zhao, JUNSPECIFIEDUNSPECIFIED
Guo, XUNSPECIFIEDUNSPECIFIED
Silva, SRPs.silva@surrey.ac.ukUNSPECIFIED
Date : 1 March 2016
Identification Number : https://doi.org/10.1002/aelm.201500374
Uncontrolled Keywords : Science & Technology, Technology, Physical Sciences, Nanoscience & Nanotechnology, Materials Science, Multidisciplinary, Physics, Applied, Science & Technology - Other Topics, Materials Science, Physics, FIELD-EFFECT TRANSISTORS, HYDROGENATED AMORPHOUS-CARBON, DEPOSITION, SEMICONDUCTORS, PLASMA, C2H2, TRANSPONDERS, ELECTRONICS, INSULATOR, CIRCUITS
Related URLs :
Depositing User : Symplectic Elements
Date Deposited : 17 May 2017 13:53
Last Modified : 17 May 2017 15:13
URI: http://epubs.surrey.ac.uk/id/eprint/840716

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